FREESTANDING SPACER HAVING SUB-LITHOGRAPHIC LATERAL DIMENSION AND METHOD OF FORMING SAME

• US 20160365425A1
• Filed: 06/15/2015
• Published: 12/15/2016
• Est. Priority Date: 06/15/2015
• Status: Active Grant

• Current Assignee: International Business Machines Corporation, Samsung Electronics Co. Ltd., Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: GlobalFoundries, Inc., International Business Machines Corporation, Samsung Electronics Co. Ltd.
• Inventors: Kim, Dong Kwon, Lian, Sean, Chen, Hsueh-Chung, Fan, Su Chen, Lie, Fee Li, Jang, Linus
• Granted Patent: US 9,653,571 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer

Abstract

An aspect of the invention includes a freestanding spacer having a sub-lithographic dimension for a sidewall image transfer process. The freestanding spacer comprises: a first spacer layer having a first portion disposed on the semiconductor layer; and a second spacer layer having a first surface disposed on the first portion of the first spacer layer, wherein the first spacer layer has a first dielectric constant and the second spacer layer has a second dielectric constant, the first dielectric constant being greater than the second dielectric constant, and wherein a dimension of each of the first and second spacer layers collectively determine the sub-lithographic lateral dimension of the freestanding spacer.

Claims

1. A method of forming a freestanding spacer for a sub-lithographic structure on a substrate, the method comprising the steps of:

forming at least one mandrel over a semiconductor layer;

depositing a first spacer layer over each of the at least one mandrel and over the semiconductor layer;

depositing a second spacer layer over the first spacer layer,

wherein the first spacer layer has a first dielectric constant and the second spacer layer has a second dielectric constant, the first dielectric constant being greater than the second dielectric constant and the first dielectric constant being between approximately 10 and approximately 50;

removing a portion of the first spacer layer and the second spacer layer to expose an upper surface of each of the at least one mandrel; and

removing each of the at least one mandrel such that the first and second spacer layers remain, thereby forming the freestanding spacer, the first and second spacer layers together defining a sub-lithographic lateral dimension of the freestanding spacer.

2. The method of claim 1, further comprising:

depositing a third spacer layer over the second spacer layer prior to the removing of the portion of the first spacer layer.

3. The method of claim 2, further comprising:

removing a portion of the third spacer layer from the upper surface of each of the at least one mandrel prior to removing each of the at least one mandrel.

4. The method of claim 1, further comprising:

removing the first spacer layer from an area adjacent to the second spacer layer subsequent to the removing of each of the at least one mandrel such that a portion of the first spacer layer remains disposed between the second spacer layer and the semiconductor layer.

6. The method of claim 1, wherein the depositing the first spacer layer includes depositing at least one of aluminum oxide, titanium oxide, tantalum pentoxide and hafnium oxide.

7. The method of claim 1, wherein the removing a portion of the first and second spacer layers includes reactive-ion etching the first and second spacer layers.

21. The method of claim 1, wherein the first spacer layer is of a material that is selective to a material of the second spacer layer such that the first spacer layer substantially prevents etching of the second spacer layer.

5. (canceled)

8. A method of forming a freestanding spacer for a sub-lithographic structure on a substrate, the method comprising the steps of:

forming at least one mandrel over a semiconductor layer;

depositing a first spacer layer over each of the at least one mandrel and over the semiconductor layer;

depositing a second spacer layer over the first spacer layer,

wherein the first spacer layer has a first dielectric constant and the second spacer layer has a second dielectric constant, the first dielectric constant being greater than the second dielectric constant;

removing a portion of the first spacer layer and the second spacer layer to expose an upper surface of each of the at least one mandrel;

removing each of the at least one mandrel such that the first and second spacer layers remain thereby forming the freestanding spacer,

wherein a remaining portion of each of the first and second spacer layers collectively define a first sub-lithographic lateral dimension; and

removing a portion of the semiconductor layer using the first and second spacer layers to form the sub-lithographic structure.

9. The method of claim 8, wherein the removing the portion of the semiconductor layer includes removing the portion of the semiconductor layer such that a second sub-lithographic lateral dimension of the sub-lithographic structure is substantially equal to the first sub-lithographic lateral dimension of the freestanding spacer.

10. The method of claim 8, further comprising:

depositing a third spacer layer over the second spacer layer prior to the removing of the portion of the first spacer layer,

wherein a portion of the third spacer layer and the remaining portion of each of the first and second spacer layers collectively determine the first sub-lithographic lateral dimension of the freestanding spacer.

11. The method of claim 10, further comprising:

removing a portion of the third spacer layer from the upper surface of each of the at least one mandrel, and

wherein the removing the portion of the semiconductor layer includes removing the portion of the semiconductor layer such that a second sub-lithographic lateral dimension of the sub-lithographic structure is substantially equal to the first sub-lithographic lateral dimension of the freestanding spacer.

12. The method of claim 8, further comprising:

removing the first spacer layer from an area adjacent to the second spacer layer subsequent to the removing of each of the at least one mandrel such that a portion of the first spacer layer remains disposed between the second spacer layer and the semiconductor layer.

13. The method of claim 8, wherein the depositing the first spacer layer includes depositing material having a dielectric constant of approximately 10 to approximately 50.

14. The method of claim 8, wherein the depositing the first spacer layer includes depositing at least one of aluminum oxide, titanium oxide, tantalum pentoxide and hafnium oxide.

15. A freestanding spacer having a sub-lithographic lateral dimension for a sidewall image transfer process, the freestanding spacer comprising:

a first spacer layer having a first portion disposed over the semiconductor layer; and

a second spacer layer having a first surface disposed on the first portion of the of the first spacer layer,

wherein the first spacer layer has a first dielectric constant and the second spacer layer has a second dielectric constant, the first dielectric constant being greater than the second dielectric constant and the first dielectric constant being between approximately 10 and approximately 50, and

wherein a dimension of each of the first and second spacer layers collectively determine the sub-lithographic lateral dimension of the freestanding spacer.

16. The freestanding spacer of claim 15, wherein the first spacer layer includes at least one of:

aluminum oxide, titanium oxide, tantalum pentoxide or hafnium oxide.

18. The freestanding spacer of claim 15, wherein the sub-lithographic lateral dimension is substantially equal to approximately 30 nanometers.

19. The freestanding spacer of claim 15, further comprising:

a third spacer layer substantially coating a sidewall of the second spacer layer,

wherein the third spacer layer together with the first spacer layer and the second spacer layer collectively define the sub-lithographic lateral dimension of the freestanding spacer.

20. The freestanding spacer of claim 15, wherein the first spacer layer further includes a second portion adjacent to a second surface of the second spacer layer of the freestanding spacer.

22. The freestanding spacer of claim 15, wherein the first spacer layer is of a material that is selective to a material of the second spacer layer such that the first spacer layer substantially prevents etching of the second spacer layer.

17. (canceled)