LIGHT EMITTING DEVICE

• US 20160365498A1
• Filed: 08/25/2016
• Published: 12/15/2016
• Est. Priority Date: 04/26/2013
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: YONEDA, Akinori, KINOUCHI, Akiyoshi, KASAI, Hisashi, AIHARA, Yoshiyuki, SASA, Hirokazu, NAKAMURA, Shinji
• Granted Patent: US 10,224,470 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/60 Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto when forming bonding pads H01L24/03; when forming bump connectors H01L24/11; when forming layer connectors H01L24/27
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/2101 Structure
• CPC Class Codes: H01L 2224/2105 Shape
• CPC Class Codes: H01L 2224/211 Disposition
• CPC Class Codes: H01L 2224/215 Material
• CPC Class Codes: H01L 2224/2401 Structure
• CPC Class Codes: H01L 2224/24011 Deposited, e.g. MCM-D type
• CPC Class Codes: H01L 2224/2405 Shape
• CPC Class Codes: H01L 2224/2413 : Connecting within a semiconductor or solid-state body
• CPC Class Codes: H01L 2224/245 : Material
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48095 : Kinked
• CPC Class Codes: H01L 2224/48101 : Connecting bonding areas at the same height, e.g. horizontal bond
• CPC Class Codes: H01L 2224/4813 : Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/821 : Forming a build-up interconnect
• CPC Class Codes: H01L 2224/82106 : by subtractive methods
• CPC Class Codes: H01L 2224/85947 : by mechanical means, e.g. "pull-and-cut", pressing, stamping
• CPC Class Codes: H01L 2224/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 : Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12035 : Zener diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3511 : Warping
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 2933/005 : relating to encapsulations
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/24 : of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/387 : with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 : Materials therefor
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

Claims

1. A method for producing a light emitting device comprising:

providing a light emitting element including a plurality of electrodes disposed over a semiconductor layer thereof;

stacking a plurality of bumps on at least one of the plurality of electrodes;

forming a resin layer over the semiconductor layer to surround the plurality of bumps; and

removing a part of the resin layer to expose a part of the plurality of bumps from an upper surface of the resin layer.

2. The method for producing a light emitting device according to claim 1, further comprising:

stacking a bump on another electrode of the plurality of electrodes; and

electrically connecting a bump of the plurality of bumps with the bump on the other electrode using a wire.

3. The method for producing a light emitting device according to claim 1, wherein the part of the resin layer is removed by at least one selected from the group consisting of grinding, polishing and cutting.

4. The method for producing a light emitting device according to claim 1, further comprising:

forming a metal film on an upper surface of the resin layer, the metal film being electrically connected with a part of the plurality of bumps.

5. The method for producing a light emitting device according to claim 4, wherein the metal is formed by sputtering.