Method and System for Charged Particle Microscopy with Improved Image Beam Stabilization and Interrogation

• US 20160372304A1
• Filed: 03/24/2016
• Published: 12/22/2016
• Est. Priority Date: 03/24/2015
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Masnaghetti, Doug K., Trease, David, Bothra, Rohit, Knippelmeyer, Rainer, Toth, Gabor, Chen, Grace Hsiu-Ling
• Granted Patent: US 10,643,819 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01N 2223/6116 semiconductor wafer
• CPC Class Codes: G01N 23/203 Measuring back scattering
• CPC Class Codes: H01J 2237/0044 of objects being observed or treated
• CPC Class Codes: H01J 2237/0048 Charging arrangements
• CPC Class Codes: H01J 2237/057 Energy or mass filtering
• CPC Class Codes: H01J 2237/24465 Sectored detectors, e.g. quadrants
• CPC Class Codes: H01J 2237/24475 Scattered electron detectors
• CPC Class Codes: H01J 2237/2448 Secondary particle detectors
• CPC Class Codes: H01J 2237/24485 Energy spectrometers
• CPC Class Codes: H01J 2237/2449 Detector devices with moving charges in electric or magnetic fields
• CPC Class Codes: H01J 2237/2804 Scattered primary beam
• CPC Class Codes: H01J 2237/2806 Secondary charged particle
• CPC Class Codes: H01J 37/10 Lenses
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence

Abstract

A scanning electron microscopy system with improved image beam stability is disclosed. The system includes an electron beam source configured to generate an electron beam and a set of electron-optical elements to direct at least a portion of the electron beam onto a portion of the sample. The system includes an emittance analyzer assembly. The system includes a splitter element configured to direct at least a portion secondary electrons and/or backscattered electrons emitted by a surface of the sample to the emittance analyzer assembly. The emittance analyzer assembly is configured to image at least one of the secondary electrons and/or the backscattered electrons.

Claims

1. A scanning electron microscopy apparatus comprising:

an electron beam source configured to generate an electron beam;

a set of electron-optical elements to direct at least a portion of the electron beam onto a portion of the sample;

an emittance analyzer assembly;

a splitter element configured to direct at least a portion of at least one of secondary electrons or backscattered electrons emitted by a surface of the sample to the emittance analyzer assembly,

wherein the emittance analyzer assembly is configured to image at least one of the secondary electrons or the backscattered electrons, wherein the emittance analyzer assembly includes;

a set of deflection optics;

a first electron-optic lens;

a first electron detector including a center aperture, wherein the first electron detector is configured to collect at least one of a portion of the secondary electrons or a portion of the backscattered electrons;

a first mesh element disposed downstream from the first electron detector;

a second mesh element disposed downstream from the first mesh element, wherein the first electron detector and the first mesh element form a deceleration region, wherein the first mesh element and the second mesh element form a drift region;

an energy filter disposed downstream from the second ground mesh element;

a second electron-optic lens; and

a second electron detector configured to collect at least one of an additional portion of the secondary electrons or an additional portion of the backscattered electrons.

2. The scanning electron microscopy apparatus of claim 1, wherein the set of deflection optics is configured to align the image beam with one or more components of the emittance analyzer assembly.

3. The scanning electron microscopy apparatus of claim 1, wherein the set of deflection optics include at least one of a set of electrostatic deflectors or magnetic deflectors.

4. The scanning electron microscopy apparatus of claim 1, wherein the set of deflection optics are disposed within an acceleration liner.

5. The scanning electron microscopy apparatus of claim 1, wherein the first electron-optic lens is disposed downstream from the set of deflection optics.

6. The scanning electron microscopy apparatus of claim 1, wherein the first electron-optic lens comprises:

at least one of an electrostatic lens or a magnetic lens.

7. The scanning electron microscopy apparatus of claim 1, wherein the first electron detector is held at ground.

8. The scanning electron microscopy apparatus of claim 1, wherein the first mesh element is disposed downstream from the first electron detector and is held at a potential equal to the surface potential of the sample.

9. The scanning electron microscopy apparatus of claim 1, wherein the second mesh element is disposed downstream from the first mesh element and is held at a potential equal to the surface potential of the sample.

10. The scanning electron microscopy apparatus of claim 1, wherein the first mesh element comprises a planar wire mesh.

11. The scanning electron microscopy apparatus of claim 1, wherein the second mesh element comprises a hemispherical wire mesh.

12. The scanning electron microscopy apparatus of claim 1, wherein the energy filter comprises a hemispherical wire mesh.

13. The scanning electron microscopy apparatus of claim 1, wherein at least one of the first electron detector or the second electron detector comprise:

at least one of a multi-channel plate detector, a solid state detector or a scintillator detector.

14. The scanning electron microscopy apparatus of claim 1, wherein at least one of the first electron detector or the second electron detector are segmented into two or more segments.

15. The scanning electron microscopy apparatus of claim 1, wherein the emittance analyzer assembly is configured to operate in secondary electron and backscattered electron imaging mode.

16. The scanning electron microscopy apparatus of claim 1, wherein the emittance analyzer assembly is configured to operate in backscattered electron and high aspect ratio electron imaging mode.

17. The scanning electron microscopy apparatus of claim 1, wherein the emittance analyzer assembly is configured to operate in backscattered electron only imaging mode.

18. The scanning electron microscopy apparatus of claim 1, wherein the electron source is configured to apply an in-situ flood pre-dose to the sample.

19. The scanning electron microscopy apparatus of claim 1, further comprising:

a flood gun configured to apply an in-situ flood pre-dose to the sample.

20. The scanning electron microscopy apparatus of claim 1, further comprising:

a gated integrator.

21. The scanning electron microscopy apparatus of claim 1, wherein the gated integrator is configured to lock one or more components of the emittance analyzer assembly to the surface potential of the sample.

22. An emittance analyzer assembly comprising:

a set of deflection optics;

a first electron-optic lens;

a first electron detector including a center aperture, wherein the first electron detector is configured to collect at least one of a portion of the secondary electrons or a portion of the backscattered electrons;

a first mesh element disposed downstream from the first electron detector;

a second mesh element disposed downstream from the first mesh element, wherein the first electron detector and the first mesh element form a deceleration region, wherein the first mesh element and the second mesh element form a drift region;

an energy filter disposed downstream from the second ground mesh element;

a second electron-optic lens; and

a second electron detector configured to collect at least one of an additional portion of the secondary electrons or an additional portion of the backscattered electrons.

23. The emittance analyzer assembly of claim 22, wherein the emittance analyzer assembly is configured to operate in secondary electron and backscattered electron imaging mode.

24. The emittance analyzer assembly of claim 22, wherein the emittance analyzer assembly is configured to operate in backscattered electron and high aspect ratio electron imaging mode.

25. The emittance analyzer assembly of claim 22, wherein the emittance analyzer assembly is configured to operate in backscattered electron only imaging mode.

26. The emittance analyzer assembly of claim 22, wherein the emittance analyzer assembly is configured to switch between a secondary electron and backscattered electron imaging mode, a backscattered electron and high aspect ratio electron imaging mode, and a backscattered electron only imaging mode.

27. A system for comprising:

a first emittance analyzer assembly; and

a second emittance analyzer assembly, wherein at least one of the first emittance analyzer assembly or the second emittance analyzer comprises;

a set of deflection optics;

a first electron-optic lens;

a first electron detector including a center aperture, wherein the first electron detector is configured to collect at least one of a portion of the secondary electrons or a portion of the backscattered electrons;

a first mesh element disposed downstream from the first electron detector;

a second mesh element disposed downstream from the first mesh element, wherein the first electron detector and the first mesh element form a deceleration region, wherein the first mesh element and the second mesh element form a drift region;

an energy filter disposed downstream from the second ground mesh element;

a second electron-optic lens; and

a second electron detector configured to collect at least one of an additional portion of the secondary electrons or an additional portion of the backscattered electrons.

28. A system for comprising:

a first emittance analyzer assembly;

a second emittance analyzer assembly; and

a third emittance analyzer assembly, wherein at least one of the first emittance analyzer assembly, the second emittance analyzer assembly or the third emittance analyzer assembly comprises;

a set of deflection optics;

a first electron-optic lens;

a first electron detector including a center aperture, wherein the first electron detector is configured to collect at least one of a portion of the secondary electrons or a portion of the backscattered electrons;

a first mesh element disposed downstream from the first electron detector;

a second mesh element disposed downstream from the first mesh element, wherein the first electron detector and the first mesh element form a deceleration region, wherein the first mesh element and the second mesh element form a drift region;

an energy filter disposed downstream from the second ground mesh element;

a second electron-optic lens; and

a second electron detector configured to collect at least one of an additional portion of the secondary electrons or an additional portion of the backscattered electrons.

29. A scanning electron microscopy apparatus for mitigating errors caused by surface charging comprising:

a primary electron beam source;

a set of electron-optical elements to direct at least a portion of the primary electron beam onto a surface of the sample;

an emittance analyzer assembly; and

a controller including one or more processors configured to execute a set of program instructions configured to cause the one or more processors to;

receive one or more surface potential measurements of the surface of the sample from the emittance analyzer assembly;

determine whether the surface of the sample is charged above a selected potential threshold based on the one or more surface potential measurements; and

upon determining the surface is charged above the selected threshold, direct at least one of the primary source or a flood source to provide a charge dose to the surface of the sample.

30. A scanning electron microscopy apparatus for mitigating charge induced artifacts comprising:

a primary electron beam source;

a set of electron-optical elements to direct at least a portion of the primary electron beam onto a surface of the sample;

a set of imaging optics configured to image at least one of secondary electrons or backscattered electrons emitted by the sample; and

a gated integrator, wherein the gate integrator is configured to close a control loop defined between a surface of the sample and one of more of the set of imaging optics.

31. A scanning electron microscopy apparatus for mitigating charged induced artifacts comprising:

an electron beam source;

a multi-beam aperture, wherein the electron source and the multi-beam aperture are configured to generate a plurality of electron beams;

a set of multi-beam analyzer optics, wherein the set of multi-beam analyzer optics includes a multi-beam filter; and

a gated integrator, wherein the gate integrator is configured to close a control loop defined between a surface of the sample and the multi-beam filter.