METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
First Claim
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1. A method of making a semiconductor device comprising:
- forming a first opening in an insulating layer, wherein the first opening has a width and a length;
forming a second opening in the insulating layer, wherein the second opening has a width less than the length of the first opening, and is electrically connected to the first opening;
forming a third opening in the insulating layer, wherein the third opening has a width less than the width of the second opening, and is electrically connected to the second opening; and
filling the first opening, the second opening and the third opening with a conductive material.
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Abstract
A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.
5 Citations
20 Claims
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1. A method of making a semiconductor device comprising:
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forming a first opening in an insulating layer, wherein the first opening has a width and a length; forming a second opening in the insulating layer, wherein the second opening has a width less than the length of the first opening, and is electrically connected to the first opening; forming a third opening in the insulating layer, wherein the third opening has a width less than the width of the second opening, and is electrically connected to the second opening; and filling the first opening, the second opening and the third opening with a conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of making a semiconductor device comprising:
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forming an opening in a first insulating layer, wherein the opening comprises a first section having a first width and a first length, a second section having a second width, and a third section having a third width, and the third width is less than the second width; filling the opening with a conductive material; and depositing a second insulating layer over the first insulating layer and over the conductive material. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of making a semiconductor device comprising:
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generating a first interconnect layout pattern, wherein the interconnect layout pattern comprises a first section having a first width and a first length, a second section having a second width a, and a third section having a third width, and the third width is less than the second width forming an opening in a first insulating layer based on the first interconnect layout pattern; and filling the opening in the first insulating layer with a first conductive material. - View Dependent Claims (17, 18, 19, 20)
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Specification