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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

  • US 20160372368A1
  • Filed: 09/02/2016
  • Published: 12/22/2016
  • Est. Priority Date: 02/12/2015
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device comprising:

  • forming a first opening in an insulating layer, wherein the first opening has a width and a length;

    forming a second opening in the insulating layer, wherein the second opening has a width less than the length of the first opening, and is electrically connected to the first opening;

    forming a third opening in the insulating layer, wherein the third opening has a width less than the width of the second opening, and is electrically connected to the second opening; and

    filling the first opening, the second opening and the third opening with a conductive material.

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