TERMINATION OF HIGH VOLTAGE (HV) DEVICES WITH NEW CONFIGURATIONS AND METHODS
First Claim
1. A semiconductor power device disposed in a semiconductor substrate, comprising an upper doped region formed on top of a lower doped region with a lower dopant concentration than the upper doped region, and having an active cell area and an edge termination area wherein:
- the edge termination area comprises a plurality of termination trenches formed on said heavily doped region, lined with a dielectric layer and filled with a conductive material therein;
a plurality of buried guard rings formed as doped regions in said lightly doped region of said semiconductor substrate immediately below a bottom surface of all of the termination trenches; and
the plurality of termination trenches are disposed with a distance between two adjacent termination trenches wherein the distance is smaller near the active area and the distance is increased for the adjacent trenches disposed farther away from the active cell area.
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Abstract
This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a heavily doped region formed on a lightly doped region and having an active cell area and an edge termination area. The edge termination area comprises a plurality of termination trenches formed in the heavily doped region with the termination trenches lined with a dielectric layer and filled with a conductive material therein. The edge termination further includes a plurality of buried guard rings formed as doped regions in the lightly doped region of the semiconductor substrate immediately adjacent to the termination trenches.
3 Citations
16 Claims
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1. A semiconductor power device disposed in a semiconductor substrate, comprising an upper doped region formed on top of a lower doped region with a lower dopant concentration than the upper doped region, and having an active cell area and an edge termination area wherein:
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the edge termination area comprises a plurality of termination trenches formed on said heavily doped region, lined with a dielectric layer and filled with a conductive material therein; a plurality of buried guard rings formed as doped regions in said lightly doped region of said semiconductor substrate immediately below a bottom surface of all of the termination trenches; and the plurality of termination trenches are disposed with a distance between two adjacent termination trenches wherein the distance is smaller near the active area and the distance is increased for the adjacent trenches disposed farther away from the active cell area. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor power device disposed in a semiconductor substrate, comprising a heavily doped region formed on top of a lightly doped region, and having an active cell area and an edge termination area wherein:
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the edge termination area comprises a plurality of termination trenches formed on said heavily doped region, lined with a dielectric layer and filled with a conductive material therein; and a plurality of buried guard rings formed as doped regions in said lightly doped region of said semiconductor substrate immediately below a bottom surface and surrounding a lower portion of the termination trenches. - View Dependent Claims (8, 9, 10, 11)
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12. A method for manufacturing a semiconductor power device in a semiconductor substrate, comprising a heavily doped region formed on top of a lightly doped region, and having an active cell area and an edge termination area comprising:
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opening a plurality of termination trenches on said heavily doped region in the edge termination area; implanting a plurality of doped regions through the termination trenches to function as buried guard rings in said lightly doped region of said semiconductor substrate immediately adjacent to the termination trenches; and filling said termination trenches with a conductive filler for electrically connecting to a source electrode of said semiconductor power device. - View Dependent Claims (13, 14, 15, 16)
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Specification