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SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME

  • US 20160379825A1
  • Filed: 09/07/2016
  • Published: 12/29/2016
  • Est. Priority Date: 02/02/2011
  • Status: Active Grant
First Claim
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1. A method for producing a semiconductor power device, the semiconductor power device having a semiconductor layer and a trench-gate type transistor structure formed in the semiconductor layer, the trench-gate type transistor structure comprising:

  • a first conductivity type source region;

    a second conductivity type body region contiguous to the source region;

    a first conductivity type drift region contiguous to the body region;

    a gate trench formed in such a way as to straddle the source region, the body region, and the drift region;

    a gate insulation film formed on an inner surface of the gate trench; and

    a gate electrode facing the body region with the gate insulation film therebetween, the method comprising;

    a step of forming the gate trench from a surface of the semiconductor layer toward an inside thereof;

    a step of forming a first insulation film on the inner surface of the gate trench;

    a step of removing a part on a bottom surface of the gate trench in the first insulation film; and

    a step of forming a second insulation film having a dielectric constant higher than SiO2 in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

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