SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
First Claim
1. A method for producing a semiconductor power device, the semiconductor power device having a semiconductor layer and a trench-gate type transistor structure formed in the semiconductor layer, the trench-gate type transistor structure comprising:
- a first conductivity type source region;
a second conductivity type body region contiguous to the source region;
a first conductivity type drift region contiguous to the body region;
a gate trench formed in such a way as to straddle the source region, the body region, and the drift region;
a gate insulation film formed on an inner surface of the gate trench; and
a gate electrode facing the body region with the gate insulation film therebetween, the method comprising;
a step of forming the gate trench from a surface of the semiconductor layer toward an inside thereof;
a step of forming a first insulation film on the inner surface of the gate trench;
a step of removing a part on a bottom surface of the gate trench in the first insulation film; and
a step of forming a second insulation film having a dielectric constant higher than SiO2 in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.
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Abstract
A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first insulation film is formed on the inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.
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Citations
12 Claims
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1. A method for producing a semiconductor power device, the semiconductor power device having a semiconductor layer and a trench-gate type transistor structure formed in the semiconductor layer, the trench-gate type transistor structure comprising:
- a first conductivity type source region;
a second conductivity type body region contiguous to the source region;
a first conductivity type drift region contiguous to the body region;
a gate trench formed in such a way as to straddle the source region, the body region, and the drift region;
a gate insulation film formed on an inner surface of the gate trench; and
a gate electrode facing the body region with the gate insulation film therebetween, the method comprising;a step of forming the gate trench from a surface of the semiconductor layer toward an inside thereof; a step of forming a first insulation film on the inner surface of the gate trench; a step of removing a part on a bottom surface of the gate trench in the first insulation film; and a step of forming a second insulation film having a dielectric constant higher than SiO2 in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- a first conductivity type source region;
Specification