SEMICONDUCTOR LIGHT-EMITTING DEVICE

• US 20170005232A1
• Filed: 09/14/2016
• Published: 01/05/2017
• Est. Priority Date: 08/27/2013
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: LIN, Yu-Ling, CHEN, Chao-Hsing, WANG, Jia-Kuen, TSENG, Tzu-Yao, CHIANG, Tsung-Hsun, HU, Bo-Jiun, CHUANG, Wen-Hung
• Granted Patent: US 10,411,162 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/0012 p-i-n devices
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

Claims

1. A semiconductor light-emitting device, comprising:

a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;

a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer;

a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches;

a patterned metal layer formed on the second semiconductor layer and filling in one of the plurality of first trenches or the second trench;

a first pad portion formed on the second semiconductor layer and electrically connecting the second semiconductor layer; and

a second pad portion formed on the second semiconductor layer and electrically connecting the first semiconductor layer.

2. The semiconductor light-emitting device of claim 1, wherein a width of one of the plurality of first trenches is greater than a width of the second trench.

3. The semiconductor light-emitting device of claim 1, wherein the first pad portion is aligned with the second pad portion.

4. The semiconductor light-emitting device of claim 1, wherein the patterned metal layer comprises a first metal region, and a second metal region electrically isolated to the first metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench.

5. The semiconductor light-emitting device of claim 1, wherein in a top view, a shape composed by the plurality of first trenches and the second trench comprises a plurality of rectangles, and the first pad portion and the second pad portion are disposed in one of the plurality of rectangles.

6. The semiconductor light-emitting device of claim 1, wherein each of the plurality of first trenches comprises a first end connecting one part of the second trench, and/or each of the plurality of first trenches comprises a second end connecting another part of the second trench.

7. The semiconductor light-emitting device of claim 1, wherein the plurality of first trenches is parallel to one another.

8. The semiconductor light-emitting device of claim 1, wherein the patterned metal layer comprises a portion filling in the one of the plurality of first trenches or the second trench, the first pad portion and/or the second pad portion is devoid of directly contacting the portion of the patterned metal layer.

9. A semiconductor light-emitting device, comprising:

a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer comprises a periphery side surface surrounding the active layer wherein the periphery side surface connects a top surface of the first semiconductor layer;

trenches penetrating the active layer and the second semiconductor layer to expose the top surface of the first semiconductor layer wherein the trenches are disposed near the periphery side surface of the first semiconductor layer; and

a patterned metal layer formed on the second semiconductor layer and comprising a first metal region and a second metal region, wherein the second metal region is formed in one of the trenches and covers the periphery side surface of the first semiconductor layer.

10. The semiconductor light-emitting device of claim 9, further comprising a plurality of first pad portions formed on the second semiconductor layer to electrically connect the second semiconductor layer through the first metal region;

and a plurality of second pad portions formed on the second semiconductor layer to electrically connect the first semiconductor layer through the second metal region.

11. The semiconductor light-emitting device of claim 10, wherein the first metal region comprises a group of sub-regions and the patterned metal layer comprises a plurality of ring-opening surrounding the group of sub-regions.

12. The semiconductor light-emitting device of claim 10, wherein the plurality of first pad portions is disposed in a row, and the plurality of second pad portions is aligned with the plurality of first pad portions.

13. The semiconductor light-emitting device of claim 12, wherein in a top view, a shape composed by the trenches comprises a plurality of rectangles.

14. The semiconductor light-emitting device of claim 13, wherein each of the plurality of the first pad portions is disposed in each of the plurality of rectangles respectively, and/or each of the plurality of the second pad portions is disposed in each of the plurality of rectangles respectively.

15. The semiconductor light-emitting device of claim 10, wherein a shape of each of the plurality of first pad portions comprises a first rectangle, and/or a shape of each of the plurality of second pad portions comprises a second rectangle.

16. The semiconductor light-emitting device of claim 10, wherein the trenches are separated from one another.

17. A semiconductor light-emitting device, comprising:

a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;

a depression penetrating from a surface of the second semiconductor layer to expose a surface of the first semiconductor layer, wherein the depression comprises a path surrounding an outer periphery of the semiconductor stack, a longitudinal path, and a transversal path, wherein the path, the longitudinal path, and the transversal path are connected to each other;

a first contact structure comprising a periphery formed on the second semiconductor layer; and

a second contact structure surrounding the periphery of the first contact structure.

18. The semiconductor light-emitting device of claim 17, further comprising a first pad portion and a second pad portion formed on the second semiconductor layer wherein the first pad portion and the second pad portion are separated from each other in a top view.

19. The semiconductor light-emitting device of claim 18, wherein the second pad portion comprises a connecting part covering the path.

20. The semiconductor light-emitting device of claim 17, wherein in a top view, a shape of the longitudinal path and the transversal path comprises a cross.