LIGHT EMITTING DIODE, PHOTODIODE, DISPLAYS, AND METHOD FOR FORMING THE SAME

• US 20170005235A1
• Filed: 11/28/2014
• Published: 01/05/2017
• Est. Priority Date: 11/27/2013
• Status: Abandoned Application

• Current Assignee: Princeton University
• Original Assignee: Princeton University
• Inventors: Chou, Stephen Y., Ding, Wei
• Application Number:
  US15/100,101
• Publication Number:
  US 20170005235A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/822 characterised by their shape
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors
• CPC Class Codes: H10K 59/80515 characterised by their shape
• CPC Class Codes: H10K 59/876 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/8791 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The present invention is related to solid state light emitting diodes (LEDs), photodetector/photovoltaic devices, displays, applications and methods for making the same. As demonstrated experimentally, the LEDs, as disclosed herein, have high light emission efficiency, high contrast, high brightness, low ambient light reflection, low light glare, and a tunable display viewing angle. The same LED disclosed here can be used as high efficiency displays and high efficiency photovoltaic device or photodetectors. This means that the same device, where used in array form, can be used as the display (LED operation mode) and power supply (photovoltaic device mode) and camera (photodetector and imaging mode).

Claims

1. A light-emitting diode (LED), comprising:

a photonic resonant cavity antenna comprising;

(a) a top metallic layer that is light transmissive and has a lateral structure smaller than wavelength of the light;

(b) a bottom metallic layer; and

(c) a light emitting material layer of semiconductor positioned between the top metallic layer and the bottom metallic layer for generated light

whereas the generated light transmitted through the top metallic layer, and whereas the LED has a low reflection to an ambient light, improved light generation in the cavity and/or improved light transmission to outside the cavity, and improved contrast.

2. The light-emitting diode according to claim 1, wherein a plural of light emitting diodes forms a display.

3. The light-emitting diode according to claim 1, wherein a plural of light emitting diodes forms a camera with each LED as one pixel.

4. The light-emitting diode according to claim 1, wherein a plural of light emitting diodes forms an array of photodetectors/photovoltaic device.

5. The light-emitting diode according to claim 1, wherein a plural of light emitting diodes operates in both light emitting mode and photon detection mode for imaging or supper supply.

6. The light-emitting diode according to claim 1, wherein the wavelength of the light ranges from about 100 nm to about 10,000 nm.

7. The light-emitting diode according to claim 1, wherein the top metallic layer comprises a metal mesh with one or more apertures in the top metallic layer.

8. The light-emitting diode according to claim 7 wherein the one or more apertures have a shape selected from a group including round, rectangle, polygon, triangle, and a superposition thereof.

9. The light-emitting diode according to claim 7, wherein the apertures have an aperture size of less than a wavelength of the light.

10. The light-emitting diode assembly according to claim 1, wherein the top metallic layer comprises one or a plural of metallic disks.

11. The light-emitting diode assembly according to claim 9, wherein the shape of the disks has a the shape selected from a group including round, rectangle polygon, and triangle, and a superposition thereof, and the disk has a lateral dimension less than a wavelength of the light.

12. The light-emitting diode according to claim 1, wherein the top metallic layer or the backplane layer is made of a material selected from a group comprising gold, copper, silver, aluminum, titanium, platinum, an alloy made of one or more metals thereof, a mixture of one or more metals thereof, and a multi-layer stacking structure thereof.

13. The light-emitting diode according to claim 1, wherein the top metallic layer forms an electrode for supplying electrical current to the light-emitting material layer.

14. The light-emitting diode according to claim 1 wherein the top metallic layer has a thickness ranging from about 1 nm to about 100 nm.

15. The light-emitting diode according to claim 1, further comprising:

a first interface layer disposed between the top metallic layer and the light-emitting material layer; and

a second interface layer disposed between the backplane layer and the light-emitting material layer.

16. The light-emitting diode of claim 1, wherein the light-emitting material layer is made of a material including a semiconductor that emits photons under an electric current.

17. The light-emitting diode of claim 14, wherein the light-emitting material layer includes one or more of a single material, a mixture of a plurality of materials, a multi-layer stacking structure of a plurality of materials, a p-n junction, or a combination thereof.

18. The light-emitting diode of claim 14, wherein the light-emitting material layer is a semiconductor selected from a group consisting of crystal, amorphous, polycrystalline, inorganic, organic, a polymer, Gallium Arsenide (GaAs), Gallium Nitride (GaN), Silicon (Si), Germanium (GE), and their mixtures, multilayers, and alloys.

19. The light-emitting diode according to claim 14, wherein the light-emitting material layer is one or more organic semiconductors.

20. The light-emitting diode according to claim 14, wherein the light-emitting material layer has a thickness ranging from about 2 nm to about 700 nm.

21. The light-emitting diode assembly according to claim 14, wherein the light-emitting material layer has a thickness ranging from about 1 nm to about 100 nm.

22. The light-emitting diode according to claim 1, wherein the photonic resonant cavity antenna has one or more of the following characteristics:

improving production of a light produced in the light-emitting material layer and produced outwardly from the light-emitting diode; and

improving efficiency of the light emitting diode to absorbing ambient light.

23. A method for forming a light-emitting diode (LED), comprising:

forming a metallic-mesh electrode with subwavelength hole-array (MESH) layer that is transmissive to a light emitted by the LED and that has at least one lateral structure smaller than a wavelength of the light;

forming a backplane layer; and

forming a light-emitting material layer positioned between the top metallic layer and the backplane layer, wherein the light-emitting material layer is grown by using at least one of low temperature molecule beam epitaxy and thin film deposition.

24. The method according to claim 23, wherein the forming of the top metallic layer is fabricated by at least one method selected from a group comprising electron beam lithography, ion beam lithography, optical lithography, and self-assembly.

25. The method according to claim 23, wherein the forming of the top metallic layer comprises transfer printing.

26. The method according to claim 23, wherein the forming of the top metallic layer comprises nanoprinting.