SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20170005242A1
• Filed: 04/26/2016
• Published: 01/05/2017
• Est. Priority Date: 07/03/2015
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Myeong Ha, SONG, Sang Yeob, LIM, Chan Mook
• Application Number:
  US15/138,326
• Publication Number:
  US 20170005242A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: F21K 9/27 Retrofit light sources for lighting devices with two fittings for each light source, e.g. for substitution of fluorescent tubes
• CPC Class Codes: F21V 23/005 the substrate is supporting also the light source
• CPC Class Codes: F21Y 2103/10 comprising a linear array of point-like light-generating elements
• CPC Class Codes: F21Y 2105/10 comprising a two-dimensional array of point-like light-generating elements
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.

Claims

1. A semiconductor light emitting device, comprising:

a substrate having a first surface and a second surface, the second surface being opposite to the first surface;

a light emitting structure disposed on the first surface of the substrate and comprising a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and

a reflector disposed on the second surface of the substrate and comprising a low refractive index layer and a Bragg layer,

wherein the Bragg layer comprises a plurality of alternately stacked layers having different refractive indices, and

wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.

2. The semiconductor light emitting device of claim 1, wherein the low refractive index layer comprises a plurality of layers.

3. The semiconductor light emitting device of claim 1, wherein the low refractive index layer comprises a first refractive index layer and a second refractive index layer, and

the first and second refractive index layers are disposed on first and second surfaces of the Bragg layer, respectively.

4. The semiconductor light emitting device of claim 3, wherein the first low refractive index layer, the Bragg layer, and the second low refractive index layer are sequentially stacked on the substrate.

5. The semiconductor light emitting device of claim 3, wherein the first and second refractive index layers have different thicknesses.

6. The semiconductor light emitting device of claim 3, wherein the first and second refractive index layers have the same refractive index or different refractive indices.

7. The semiconductor light emitting device of claim 3, wherein light reflected by the first refractive index layer has a wavelength different from a wavelength of light reflected by the second refractive index layer.

8. The semiconductor light emitting device of claim 1, wherein the low refractive index layer has a refractive index (n), which is in a range of 1≦

n<

1.4.

9. The semiconductor light emitting device of claim 1, wherein the low refractive index layer has a thickness of 0.8λ

/n or greater,

where λ

denotes a wavelength of light generated by the active layer and n denotes a refractive index of the low refractive index layer.

10. The semiconductor light emitting device of claim 1, wherein the low refractive index layer comprises at least one selected from the group consisting of porous SiO₂, porous SiO and MgF₂.

11. The semiconductor light emitting device of claim 1, wherein the low refractive index layer is disposed on a surface of the Bragg layer.

12. The semiconductor light emitting device of claim 1, wherein the Bragg layer comprises first layers having a first refractive index and second layers having a second refractive index higher than the first refractive index, and

the refractive index of the low refractive index layer is lower than the first refractive index of the first layers.

13. The semiconductor light emitting device of claim 1, wherein at least one of the low refractive index layer and the Bragg layer comprises a dielectric material.

14. A semiconductor light emitting device, comprising:

a light emitting structure comprising a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer;

a Bragg layer disposed on a surface of the light emitting structure and comprising a plurality of alternately stacked layers having different refractive indices; and

a low refractive index layer disposed on at least one surface of the Bragg layer and having a refractive index lower than a refractive index of the Bragg layer.

15. The semiconductor light emitting device of claim 14, wherein the Bragg layer comprises first layers having a first refractive index and second layers having a second refractive index higher than the first refractive index, and

the low refractive index layer has a thickness greater than a thickness of each of the first and second layers.

16. A semiconductor light emitting diode (LED) chip comprising a first surface, on which a first electrode and a second electrode are disposed, and a second surface being opposite to the first surface, the semiconductor LED chip further comprising:

a reflector disposed on the second surface of the semiconductor LED chip, wherein the reflector comprises a low refractive index layer and a Bragg layer, a refractive index of the low refractive index layer being lower than a refractive index of the Bragg layer.

17. The semiconductor LED chip of claim 16, wherein the low refractive index layer has a refractive index (n), which is in a range of 1≦

n<

1.4.

18. The semiconductor LED chip of claim 16, wherein the low refractive index layer has a thickness equal to or greater than about 300 nm.

19. The semiconductor LED chip of claim 16, wherein the low refractive index layer is provided to at least one surface of the Bragg layer.

20. The semiconductor LED Chip of claim 16, wherein the low refractive index layer comprises a plurality of refractive index layers having the same refractive index or different refractive indices.