Light Emitting Diode Package Structure and Fabrication Method
First Claim
1. A light emitting diode package structure, comprising:
- a first reflecting material layer with through holes;
a flip chip over the first reflecting material layer, with electrodes inlaid in the through holes of the first reflecting material layer;
a first transparent material layer surrounding a side surface of the flip chip other than the electrodes;
a second reflecting material layer surrounding the first transparent material layer, an interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and
a wavelength conversion material layer.
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Accused Products
Abstract
A light emitting diode package structure includes: a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip chip except the electrodes; a second reflecting material layer surrounding the first transparent material layer, the interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and a wavelength conversion material layer covered over the above structure.
19 Citations
20 Claims
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1. A light emitting diode package structure, comprising:
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a first reflecting material layer with through holes; a flip chip over the first reflecting material layer, with electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding a side surface of the flip chip other than the electrodes; a second reflecting material layer surrounding the first transparent material layer, an interface between the first transparent material layer and the reflecting material layer is an inclined plane, an arc plane, or an irregular shape, to thereby facilitate upward light reflection of the flip chip; and a wavelength conversion material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A light emitting diode package structure, comprising:
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a first reflecting material layer with through holes; an inverted-trapezoidal flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a second reflecting material layer surrounding the inverted-trapezoidal flip chip, the interface between the second reflecting material layer and the flip chip forms an optical cup, which is good for upward light reflection of the flip chip; and a wavelength conversion material layer covered over the above structure. - View Dependent Claims (19)
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20. A fabrication method of a light emitting diode package structure, comprising:
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providing a first reflecting material layer and fabricating through holes on the first reflecting material layer; bonding a plurality of flip chips on the first reflecting material layer to make the flip chip electrodes inlaid in the through holes of the first reflecting material layer; covering a latticed photo-etched metal sheet on the flip chip where the photo-etched metal sheet has a hole-opening structure along the central line direction of adjacent flip chips; filling a second reflecting material layer on the hole-opening structure to enable the side surface of the second reflecting material layer in a trapezoid or a bowl shape; removing the photo-etched metal sheet and filling a transparent material layer in the gap between the flip chip and the second reflecting material layer so that the upper surface of the transparent material layer is flush with the upper surface of the flip chip; covering a fluorescent film on the upper surfaces of the transparent material layer and the flip chip; and forming a plurality of units by cutting along the central line of adjacent flip chips to obtain a light emitting diode package structure.
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Specification