METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE

• US 20170009371A1
• Filed: 12/26/2014
• Published: 01/12/2017
• Est. Priority Date: 12/30/2013
• Status: Active Grant

• Current Assignee: Korea Research Institute of Standards and Science
• Original Assignee: Korea Research Institute of Standards and Science
• Inventors: HWANG, Chanyong
• Granted Patent: US 9,834,855 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C01B 2204/20 Graphene characterized by its properties
• CPC Class Codes: C01B 32/186 by chemical vapour deposition [CVD]
• CPC Class Codes: C01B 32/194 After-treatment
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C30B 1/08 Zone recrystallisation
• CPC Class Codes: C30B 29/02 Elements

Abstract

The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.

Claims

1. A method of manufacturing monocrystalline graphene, the method comprising:

forming polycrystalline graphene on a substrate using a hydrocarbon gas;

forming a catalyst on the polycrystalline graphene; and

recrystallizing the polycrystalline graphene into monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.

2. The method of claim 1, wherein the substrate is an insulating substrate comprising Al₂O₃, AlN, Si₃N₄, SrTiO₃, or BN.

3. The method of claim 2, wherein the substrate is a composite substrate obtained by growing a transition metal having a thickness of 0.5 μ

m to 3 μ

m, on the insulating substrate.

4. The method of claim 2, wherein the monocrystalline graphene comprises monocrystalline graphene grown on the substrate.

5. The method of claim 1, wherein the substrate is a metal substrate comprising tungsten (W) or molybdenum (Mo).

6. The method of claim 1, wherein the substrate comprises a wafer-scale substrate.

7. The method of claim 1, wherein the forming of the polycrystalline graphene on the substrate using the hydrocarbon gas is performed at a temperature of 600°

C. to 1100°

C.

8. The method of claim 1, wherein the catalyst comprises aluminum (Al), an Al-containing compound, or a 3d transition metal compound.

9. The method of claim 8, wherein the recrystallizing of the polycrystalline graphene into the monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst is performed at a temperature of 1400°

C. to 2000°

C.

10. The method of claim 1, wherein the heat-treating comprises:

heating a first part of the polycrystalline graphene and the catalyst using a local heat source; and

moving the local heat source to another location to cool the first part and to heat a second part at the same time.

11. The method of claim 10, wherein the heat-treating is performed by moving the local heat source in a direction from one side to the other side of the substrate.

12. The method of claim 3, wherein the monocrystalline graphene comprises monocrystalline graphene grown on the substrate.