NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
First Claim
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1. A nitride semiconductor element, comprising:
- a Si substrate including a primary surface;
a buffer layer comprised of an AlN layer formed on the primary surface of the Si substrate, and an AlGaN laminated structure formed by laminating multiple AlGaN layers on the AlN layer, the buffer layer having a primary surface which has a c-plane orientation;
a Group III-nitride electron transfer layer formed on the AlGaN laminated structure; and
a Group III-nitride electron supply layer formed on the Group III-nitride electron transfer layer,wherein the AlGaN laminated structure includes a reference AlGaN layer, and an AlGaN layer that is closer to the AlN layer, andwherein the reference AlGaN layer has an a-axis average lattice constant, the AlGaN layer arranged in contact with a surface of the reference AlGaN layer has an a-axis in-plane lattice constant, wherein the surface of the reference AlGaN layer faces the AlN layer, and wherein the a-axis average lattice constant of the reference AlGaN layer is greater than the a-axis in-plane lattice constant of the AlGaN layer arranged in contact with the surface of the reference AlGaN layer, and lower than an original a-axis average lattice constant of the reference AlGaN layer.
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Abstract
A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability. On a substrate, a buffer layer including an AlN layer, a first AlGaN layer and a second AlGaN layer is formed. On the buffer layer, an element action layer including a GaN electron transfer layer and an AlGaN electron supply layer is formed. Thus, an HEMT element is constituted.
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Citations
20 Claims
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1. A nitride semiconductor element, comprising:
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a Si substrate including a primary surface; a buffer layer comprised of an AlN layer formed on the primary surface of the Si substrate, and an AlGaN laminated structure formed by laminating multiple AlGaN layers on the AlN layer, the buffer layer having a primary surface which has a c-plane orientation; a Group III-nitride electron transfer layer formed on the AlGaN laminated structure; and a Group III-nitride electron supply layer formed on the Group III-nitride electron transfer layer, wherein the AlGaN laminated structure includes a reference AlGaN layer, and an AlGaN layer that is closer to the AlN layer, and wherein the reference AlGaN layer has an a-axis average lattice constant, the AlGaN layer arranged in contact with a surface of the reference AlGaN layer has an a-axis in-plane lattice constant, wherein the surface of the reference AlGaN layer faces the AlN layer, and wherein the a-axis average lattice constant of the reference AlGaN layer is greater than the a-axis in-plane lattice constant of the AlGaN layer arranged in contact with the surface of the reference AlGaN layer, and lower than an original a-axis average lattice constant of the reference AlGaN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification