LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND CELLULAR PHONE

• US 20170012091A1
• Filed: 09/26/2016
• Published: 01/12/2017
• Est. Priority Date: 11/18/2008
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: HATANO, Kaoru, SEO, Satoshi, YAMAZAKI, Shunpei
• Application Number:
  US15/276,100
• Publication Number:
  US 20170012091A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H04M 1/0269 mounted in a fixed curved configuration, e.g. display curved around the edges of the telephone housing
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/127 comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
• CPC Class Codes: H10K 59/1275 Electrical connections of the two substrates
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/874 including getter material or desiccant
• CPC Class Codes: H10K 71/50 Forming devices by joining two substrates together, e.g. lamination techniques
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing.

Claims

1. (canceled)

2. A method of manufacturing a semiconductor device comprising:

forming a transistor over a first insulating film, wherein the first insulating film is formed over a substrate;

forming a second insulating film over the transistor;

providing a display element over the second insulating film,

separating the substrate from the first insulating film; and

attaching a flexible substrate to the first insulating film through at least an groupadhesive layer,

wherein the display element is electrically connected to the transistor.

3. The method according to claim 2, wherein the first insulating film comprises at least one film selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, and a silicon nitride film containing oxygen.

4. The method according to claim 2, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material.

5. The method according to claim 2, wherein the transistor comprises a channel formation region which comprises polycrystalline silicon.

6. The method according to claim 2, wherein the display element is a light emitting element.

7. The method according to claim 2, wherein the substrate is separated by using a roller.

8. A method of manufacturing a semiconductor device comprising:

forming a transistor over a first insulating film, wherein the first insulating film is formed over a substrate;

forming a second insulating film over the transistor;

forming an electrode over the second insulating film, wherein the electrode is electrically connected to the transistor;

electrically connecting an electrode of a display element to the electrode through conductive particles located therebetween;

separating the substrate from the first insulating film; and

attaching a flexible substrate to the first insulating film through at least an adhesive layer,

9. A method of manufacturing a semiconductor device comprising:

forming a transistor over a first side of a first insulating film, wherein the first insulating film is formed over a substrate;

forming a second insulating film over the transistor;

forming an electrode over the first insulating film, wherein the electrode is electrically connected to the transistor;

separating the substrate from the first insulating film,

wherein the electrode is electrically connected to an electrode of a display element through an opening of the first insulating film,

wherein the display element is disposed on a second side of the first insulating film opposite to the first side.

10. The method according to claim 9, wherein the first insulating film comprises at least one film selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, and a silicon nitride film containing oxygen.

11. The method according to claim 9, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material.

12. The method according to claim 9, wherein the transistor comprises a channel formation region which comprises polycrystalline silicon.

13. The method according to claim 9, wherein the display element is a light emitting element.

14. The method according to claim 9, wherein the substrate is separated by using a roller.

15. The method according to claim 9, further comprising a step of forming a groove in the first insulating film, wherein the substrate is separated by using the groove as a trigger.

16. A method of manufacturing a semiconductor device comprising:

forming a transistor over a first side of a first insulating film, wherein the first insulating film is formed over a substrate;

forming a second insulating film over the transistor;

forming an electrode over the first insulating film, wherein the electrode is in contact with a semiconductor layer of the transistor;

separating the substrate from the first insulating film,

wherein the electrode is electrically connected to an electrode of a display element through an opening of the first insulating film,

wherein the display element is disposed on a second side of the first insulating film opposite to the first side.

17. The method according to claim 16, wherein the first insulating film comprises at least one film selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, and a silicon nitride film containing oxygen.

18. The method according to claim 16, wherein the transistor comprises a channel formation region which comprises an oxide semiconductor material.

19. The method according to claim 16, wherein the transistor comprises a channel formation region which comprises polycrystalline silicon.

20. The method according to claim 16, wherein the display element is a light emitting element.

21. The method according to claim 16, wherein the substrate is separated by using a roller.

22. The method according to claim 16, further comprising a step of forming a groove in the first insulating film, wherein the substrate is separated by using the groove as a trigger.

23. The method according to claim 16, wherein the electrode is formed over the second insulating film.