LOCALIZED AND SELF-ALIGNED PUNCH THROUGH STOPPER DOPING FOR FINFET
First Claim
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1. A method for doping punch through stoppers (PTSs), comprising:
- forming fins in a monocrystalline substrate;
forming a dielectric layer at a base portion between the fins;
forming spacers on sidewalls of the fins down to a top portion of the dielectric layer;
recessing the dielectric layer to form gaps between the top portion of the dielectric layer and the spacer to expose the fins in the gaps;
doping the fins through the gaps to form PTSs in the fins; and
filling the gaps with a dielectric material to form a continuous dielectric layer.
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Abstract
A method for doping punch through stoppers (PTSs) includes forming fins in a monocrystalline substrate, forming a dielectric layer at a base portion between the fins and forming spacers on sidewalls of the fins down to a top portion of the dielectric layer. The dielectric layer is recessed to form gaps between the top portion of the dielectric layer and the spacer to expose the fins in the gaps. The fins are doped through the gaps to form PTSs in the fins.
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Citations
20 Claims
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1. A method for doping punch through stoppers (PTSs), comprising:
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forming fins in a monocrystalline substrate; forming a dielectric layer at a base portion between the fins; forming spacers on sidewalls of the fins down to a top portion of the dielectric layer; recessing the dielectric layer to form gaps between the top portion of the dielectric layer and the spacer to expose the fins in the gaps; doping the fins through the gaps to form PTSs in the fins; and filling the gaps with a dielectric material to form a continuous dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for doping punch through stoppers (PTSs), comprising:
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forming fins in a monocrystalline Si substrate; forming a dielectric layer at a base portion between the fins; mixing Ge in the fins to form SiGe fins, wherein the SiGe fins extend into the monocrystalline Si substrate below the dielectric layer; forming spacers on sidewalls of the SiGe fins down to a top portion of the dielectric layer; recessing the dielectric layer to form self-aligned gaps between the top portion of the dielectric layer and the spacer to expose the SiGe fins in the gaps; plasma doping the fins through the gaps to form PTSs in the SiGe fins; activating the PTSs by annealing; filling the gaps with a dielectric material to form a continuous dielectric layer; and etching back the dielectric layer to a position on the spacers. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A fin device having a punch through stopper (PTS), comprising:
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a fin disposed between source and drain regions and adjacent to a gate structure; the fin including a SiGe fin formed into a monocrystalline Si substrate, the SiGe fin having a portion extending above a top surface of the substrate and a second portion buried below the top surface of the substrate; and the portion extending above the top surface of the substrate including a first region forming a transistor channel, a second region forming a PTS and a third portion between the top portion of the substrate and the PTS. - View Dependent Claims (17, 18, 19, 20)
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Specification