COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

• US 20170017156A1
• Filed: 06/10/2016
• Published: 01/19/2017
• Est. Priority Date: 07/13/2015
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: KOBAYASHI, Naoki, OGIHARA, Tsutomu, KORI, Daisuke, HATAKEYAMA, Jun
• Granted Patent: US 9,857,686 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C09D 161/22 of aldehydes with acyclic or carbocyclic compounds
• CPC Class Codes: G03F 7/0397 the macromolecular compound having an alicyclic moiety in a side chain
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: G03F 7/2053 using a laser ablative removal B41C
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/36 Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

The present invention provides a composition for forming a resist underlayer film, containing an organic solvent and either or both of a compound shown by the following general formula (1) and a condensate of the compound. There can be provided a composition for forming a resist underlayer film that is capable of forming an underlayer film, especially for use in a three-layer resist process, that can reduce reflectance, has high pattern-bend resistance, and prevents line fall and wiggling after etching of a high aspect line especially thinner than 60 nm, and a patterning process using the same.

Claims

1. A composition for forming a resist underlayer film, comprising an organic solvent and either or both of a compound shown by the following general formula (1) and a condensate of the compound,

2. The composition for forming a resist underlayer film according to claim 1, wherein the condensate is obtained by a reaction of one or more compounds shown by the general formula (1) with one or more compounds selected from a compound shown by the following general formula (2-1), a compound shown by the following general formula (2-2), trioxane, paraformaldehyde, and fluorenone,

Y¹—

CHO 

 

(2-1)

wherein Y¹ represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms and optionally containing a substituent,

R⁹—

CH₂—

Y²—

CH₂—

R⁹ 

 

(2-2)

wherein Y² represents an aromatic group having 6 or more carbon atoms and optionally containing a substituent;

R⁹ represents an alkoxy group or alkanoyloxy group having 1 to 6 carbon atoms, or a halogen atom.

3. The composition for forming a resist underlayer film according to claim 1, wherein the condensate is obtained by a reaction with one or more compounds selected from compounds shown by the following general formulae (3-1), (3-2), (3-3), (3-4), and (3-5),

4. The composition for forming a resist underlayer film according to claim 2, wherein the condensate is obtained by a reaction with one or more compounds selected from compounds shown by the following general formulae (3-1), (3-2), (3-3), (3-4), and (3-5),

5. The composition for forming a resist underlayer film according to claim 1, further comprising a substituted condensate obtained by substituting a part of hydrogen atoms contained in the condensate by a glycidyl group.

6. The composition for forming a resist underlayer film according to claim 2, further comprising a substituted condensate obtained by substituting a part of hydrogen atoms contained in the condensate by a glycidyl group.

7. The composition for forming a resist underlayer film according to claim 3, further comprising a substituted condensate obtained by substituting a part of hydrogen atoms contained in the condensate by a glycidyl group.

8. The composition for forming a resist underlayer film according to claim 4, further comprising a substituted condensate obtained by substituting a part of hydrogen atoms contained in the condensate by a glycidyl group.

9. The composition for forming a resist underlayer film according to claim 1, wherein the composition for forming a resist underlayer film comprises two or more of the compound shown by the general formula (1), the condensate of the compound, and a substituted condensate obtained by substituting a part of hydrogen atoms of the condensate by a glycidyl group.

10. The composition for forming a resist underlayer film according to claim 2, wherein the composition for forming a resist underlayer film comprises two or more of the compound shown by the general formula (1), the condensate of the compound, and a substituted condensate obtained by substituting a part of hydrogen atoms of the condensate by a glycidyl group.

11. The composition for forming a resist underlayer film according to claim 1, further comprising either or both of a crosslinking agent and an acid generator.

12. A patterning process comprising:

forming a resist underlayer film on a body to be processed by using the composition for forming a resist underlayer film according to claim 1;

forming a resist middle layer film on the resist underlayer film by using a silicon-containing resist middle layer film composition;

forming a resist upper layer film on the resist middle layer film by using a resist upper layer film composition which is a photoresist composition;

forming a circuit pattern on the resist upper layer film;

etching the resist middle layer film by using the resist upper layer film having the formed pattern as a mask;

etching the resist underlayer film by using the resist middle layer film having the formed pattern as a mask;

further etching the body to be processed by using the resist underlayer film having the formed pattern as a mask, whereby the pattern is formed in the body to be processed.

13. A patterning process comprising:

forming a resist underlayer film on a body to be processed by using the composition for forming a resist underlayer film according to claim 1;

forming a resist middle layer film on the resist underlayer film by using a silicon-containing resist middle layer film composition;

forming an organic antireflective film (BARC) on the resist middle layer film;

forming a resist upper layer film on the BARC by using a resist upper layer film composition which is a photoresist composition and thereby forming a 4-layered resist film;

forming a circuit pattern on the resist upper layer film;

etching the BARC film and the resist middle layer film by using the resist upper layer film having the formed pattern as a mask;

etching the resist underlayer film by using the resist middle layer film having the formed pattern as a mask;

further etching the body to be processed by using the resist underlayer film having the formed pattern as a mask, whereby the pattern is formed in the body to be processed.

14. A patterning process comprising:

forming a resist underlayer film on a body to be processed by using the composition for forming a resist underlayer film according to claim 1;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming a resist upper layer film on the inorganic hard mask intermediate film by using a resist upper layer film composition which is a photoresist composition;

forming a circuit pattern on the resist upper layer film;

etching the inorganic hard mask intermediate film by using the resist upper layer film having the formed pattern as a mask;

etching the resist underlayer film by using the inorganic hard mask intermediate film having the formed pattern as a mask;

further etching the body to be processed by using the resist underlayer film having the formed pattern as a mask, whereby the pattern is formed in the body to be processed.

15. A patterning process comprising:

forming a resist underlayer film on a body to be processed by using the composition for forming a resist underlayer film according to claim 1;

forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist underlayer film;

forming an organic antireflective film (BARC) on the inorganic hard mask intermediate film;

forming a resist upper layer film on the BARC by using a resist upper layer film composition which is a photoresist composition and thereby forming a 4-layered resist film;

forming a circuit pattern on the resist upper layer film;

etching the BARC film and the inorganic hard mask intermediate film by using the resist upper layer film having the formed pattern as a mask;

etching the resist underlayer film by using the inorganic hard mask intermediate film having the formed pattern as a mask;

further etching the body to be processed by using the resist underlayer film having the formed pattern as a mask, whereby the pattern is formed in the body to be processed.

16. The patterning process according to claim 14, wherein the inorganic hard mask intermediate film is formed by a CVD method or an ALD method.

17. The patterning process according to claim 12, wherein the resist upper layer film is patterned by a photolithography with a wavelength ranging from 10 nm to 300 nm, a direct drawing by electron beam, a nanoimprinting, or a combination thereof.

18. The patterning process according to claim 12, wherein a development method in the patterning process is an alkaline development or a development with an organic solvent.

19. The patterning process according to claim 12, wherein the body to be processed is a semiconductor apparatus substrate or the semiconductor apparatus substrate coated with any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film.

20. The patterning process according to claim 19, wherein the metal is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof.