EXTREME EDGE SHEATH AND WAFER PROFILE TUNING THROUGH EDGE-LOCALIZED ION TRAJECTORY CONTROL AND PLASMA OPERATION
First Claim
1. An edge ring assembly for a plasma processing chamber, comprising:
- an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface;
an annular electrode disposed below the edge ring and above the annular shelf;
a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned over the annular shelf; and
a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.
1 Assignment
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Accused Products
Abstract
An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.
100 Citations
21 Claims
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1. An edge ring assembly for a plasma processing chamber, comprising:
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an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned over the annular shelf; and a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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5. The edge ring assembly of claim 5, wherein at least a portion of the annular electrode is disposed below the stepped edge of the edge ring.
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15. A system for plasma processing, comprising:
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a process chamber; an electrostatic chuck (ESC) disposed in the process chamber, the ESC having a top surface that is configured to support a substrate during plasma processing, the ESC further including an annular step surrounding the top surface, the annular step defining an annular shelf at a lower height than the top surface, the annular shelf configured to accommodate an edge ring assembly, the edge ring assembly including an edge ring configured to surround the ESC, an annular electrode disposed below the edge ring, and a dielectric ring disposed below the annular electrode and over the annular shelf; a bias electrode disposed within the ESC, the bias electrode configured to receive RF power from a first RF power supply to generate a bias voltage on the substrate; a plurality of insulated connectors disposed through the ESC, the plurality of insulated connectors configured to be disposed through the dielectric ring, each of the plurality of insulated connectors configured to provide electrical connection between a second RF power supply and the annular electrode. - View Dependent Claims (16, 17)
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18. A system for plasma processing, comprising:
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a process chamber; an electrostatic chuck (ESC) disposed in the process chamber, the ESC having a top surface that is configured to support a substrate during plasma processing, the ESC further including an annular step surrounding the top surface, the annular step defining an annular shelf at a lower height than the top surface, the annular shelf configured to accommodate an edge ring assembly, the edge ring assembly including an edge ring configured to surround the ESC, the edge ring assembly further including a dielectric ring; a bias electrode disposed within the ESC, the bias electrode configured to receive RF power from a first RF power supply to generate a bias voltage on the substrate; an annular electrode disposed within the ESC, the annular electrode being disposed below a peripheral region of the top surface of the ESC; and a plurality of insulated connectors disposed through the ESC, each of the plurality of insulated connectors configured to provide electrical connection between a second RF power supply and the annular electrode; wherein the dielectric ring is disposed below the annular electrode and over the annular shelf. - View Dependent Claims (19, 20, 21)
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Specification