METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising steps of:
- preparing a semiconductor substrate, an adhesive tape, and a substrate holding unit, the semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having a maximum diameter of not less than 100 mm, the adhesive tape having a third main surface and a fourth main surface opposite to the third main surface, the substrate holding unit being provided to be capable of holding the semiconductor substrate;
fixing the first main surface of the semiconductor substrate to the third main surface of the adhesive tape;
placing, in an accommodation chamber, the semiconductor substrate fixed to the third main surface of the adhesive tape;
evacuating the accommodation chamber while maintaining a temperature of the adhesive tape at not less than 100°
C.;
reducing a temperature of the semiconductor substrate after the step of evacuating the accommodation chamber; and
forming an electrode on the second main surface of the semiconductor substrate after the step of reducing the temperature of the semiconductor substrate,the step of evacuating the accommodation chamber including a step of evacuating the accommodation chamber while maintaining the temperature of the adhesive tape at not less than 100°
C. with a space being provided between the fourth main surface of the adhesive tape and the substrate holding unit.
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Accused Products
Abstract
There are prepared a semiconductor substrate having a first main surface and a second main surface, and an adhesive tape having a third main surface and a fourth main surface, the first main surface having a maximum diameter of not less than 100 mm. The semiconductor substrate fixed to the third main surface of the adhesive tape is placed in an accommodation chamber. The accommodation chamber is evacuated while maintaining a temperature of the adhesive tape at not less than 100° C. An electrode is formed on the second main surface after the step of reducing the temperature of the semiconductor substrate. The step of evacuating the accommodation chamber includes a step of evacuating the accommodation chamber while maintaining the temperature of the adhesive tape at not less than 100° C. with a space being provided between the fourth main surface of the adhesive tape and the substrate holding unit.
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Citations
14 Claims
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1. A method for manufacturing a semiconductor device comprising steps of:
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preparing a semiconductor substrate, an adhesive tape, and a substrate holding unit, the semiconductor substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having a maximum diameter of not less than 100 mm, the adhesive tape having a third main surface and a fourth main surface opposite to the third main surface, the substrate holding unit being provided to be capable of holding the semiconductor substrate; fixing the first main surface of the semiconductor substrate to the third main surface of the adhesive tape; placing, in an accommodation chamber, the semiconductor substrate fixed to the third main surface of the adhesive tape; evacuating the accommodation chamber while maintaining a temperature of the adhesive tape at not less than 100°
C.;reducing a temperature of the semiconductor substrate after the step of evacuating the accommodation chamber; and forming an electrode on the second main surface of the semiconductor substrate after the step of reducing the temperature of the semiconductor substrate, the step of evacuating the accommodation chamber including a step of evacuating the accommodation chamber while maintaining the temperature of the adhesive tape at not less than 100°
C. with a space being provided between the fourth main surface of the adhesive tape and the substrate holding unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification