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THREE-DIMENSIONAL JUNCTION MEMORY DEVICE AND METHOD READING THEREOF USING HOLE CURRENT DETECTION

  • US 20170025421A1
  • Filed: 10/03/2016
  • Published: 01/26/2017
  • Est. Priority Date: 05/08/2015
  • Status: Active Grant
First Claim
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1. A monolithic three-dimensional memory device comprising:

  • a stack of alternating layers comprising insulating layers and electrically conductive layers and located over a substrate; and

    a memory stack structure extending through the stack and comprising a memory film and a semiconductor junction structure vertically extending through the stack substantially perpendicular to a top surface of the substrate;

    wherein the semiconductor junction structure comprises a semiconductor channel portion, a lower doped semiconductor source portion having a doping of a first conductivity type, and an upper doped semiconductor drain portion having a doping of a second conductivity type such that a junction is located between the semiconductor channel portion and an upper doped semiconductor drain portion; and

    wherein one of the first and second conductivity types is p-type and another of the first and second conductivity types is n-type.

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