DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

• US 20170025447A1
• Filed: 01/14/2016
• Published: 01/26/2017
• Est. Priority Date: 07/21/2015
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: PARK, Jun Hyun, KIM, Sung Hwan, SONG, Se Young, SHIN, Kyoung Ju
• Application Number:
  US14/995,675
• Publication Number:
  US 20170025447A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 28/60 Electrodes

Abstract

A display device includes a substrate, a thin film transistor, a storage electrode, a pixel electrode, and a common electrode. The thin film transistor is disposed on the substrate and includes a drain electrode and a semiconductor layer. The storage electrode is disposed at a same layer as the semiconductor layer. The pixel electrode is disposed on the substrate and is electrically connected to the drain electrode. The common electrode is disposed on the substrate.

Claims

1. A display device, comprising:

a substrate;

a thin film transistor disposed on the substrate, the thin film transistor comprising a drain electrode and a semiconductor layer;

a storage electrode disposed at a same layer as the semiconductor layer, the storage electrode electrically connected to the drain electrode;

a pixel electrode disposed on the substrate, the pixel electrode being electrically connected to the drain electrode; and

a common electrode disposed on the substrate.

2. The display device of claim 1, further comprising

an insulating layer disposed between the storage electrode and the common electrode,

wherein the storage electrode, the common electrode, and the insulating layer constitute a storage capacitor.

3. The display device of claim 2, wherein the storage electrode overlaps the pixel electrode.

4. The display device of claim 2, wherein the storage electrode is physically connected to the drain electrode.

5. The display device of claim 2, wherein the storage electrode comprises an oxide semiconductor.

6. The display device of claim 5, wherein the oxide semiconductor comprises diffused hydrogen or diffused fluorine.

7. The display device of claim 2, wherein the storage electrode comprises doped polysilicon.

8. The display device of claim 2, wherein the common electrode is disposed between the storage electrode and the pixel electrode.

9. The display device of claim 2, wherein the insulating layer comprises:

a first passivation layer disposed on the storage electrode; and

a second passivation layer disposed on the first passivation layer.

10. The display device of claim 9, wherein the first passivation layer comprises silicon nitride.

11. A method of manufacturing a display device, the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer on the substrate;

forming a semiconductor layer on the gate insulating layer;

forming a photosensitive film pattern covering a first region of the semiconductor layer corresponding to a thin film transistor and exposing a second region of the semiconductor layer corresponding to a storage electrode;

forming the storage electrode by diffusing hydrogen or fluorine in the second region, the storage electrode being conductive;

removing the photosensitive film pattern;

forming, on the substrate, a source electrode and a drain electrode; and

forming, on the substrate, a common electrode.

12. The method of claim 11, wherein the diffusing of the hydrogen or the fluorine comprises performing a plasma treatment in a hydrogen gas atmosphere or a fluorine-based gas atmosphere.

13. The method of claim 11, wherein the diffusing of the hydrogen comprises:

forming a silicon nitride film; and

performing a heat treatment.

14. The method of claim 11, further comprising

forming an insulating layer between the storage electrode and the common electrode,

wherein the storage electrode, the common electrode, and the insulating layer constitute a storage capacitor.

15. The method of claim 14, wherein the forming of the insulating layer comprises:

forming a first passivation layer on the storage electrode;

performing a heat treatment; and

forming a second passivation layer on the first passivation layer.

16. The method of claim 11, wherein:

the gate electrode is a first gate electrode formed in a display area; and

the method further comprises;

forming a second gate electrode in a peripheral area in association with the formation of the first gate electrode; and

forming, before forming the photosensitive film pattern, a contact hole exposing a portion of the second gate electrode.

17. The method of claim 16, wherein the photosensitive film pattern is formed by etching a photosensitive film pattern associated with forming the contact hole.

18. The method of claim 11, further comprising:

forming a pixel electrode,

wherein the storage electrode and the pixel electrode overlap each other.

19. The method of claim 11, wherein the storage electrode is physically connected to the drain electrode.

20. The method of claim 11, wherein the storage electrode comprises a doped oxide semiconductor.