Semiconductor Device

• US 20170025544A1
• Filed: 07/21/2016
• Published: 01/26/2017
• Est. Priority Date: 07/24/2015
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, OKAZAKI, Kenichi, KOEZUKA, Junichi, NAKAYAMA, Tomonori, NAKASHIMA, Motoki
• Granted Patent: US 11,024,725 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7849 the means being provided under the channel
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Claims

1. A semiconductor device comprising:

a semiconductor film over a first insulating film;

a second insulating film over the semiconductor film;

a metal oxide film over the second insulating film;

a gate electrode over the metal oxide film; and

a third insulating film over the semiconductor film and the gate electrode,

wherein the semiconductor film comprises a metal oxide,

wherein the semiconductor film comprises a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film, and

wherein the source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

2. The semiconductor device according to claim 1, wherein the metal oxide film is an insulating film, a semiconductor film, or a conductive film.

3. The semiconductor device according to claim 1 further comprising:

a fourth insulating film over the third insulating film;

a source electrode connected to the source region through an opening in the third insulating film and the fourth insulating film; and

a drain electrode connected to the drain region through an opening in the third insulating film and the fourth insulating film.

4. The semiconductor device according to claim 1, wherein the metal oxide film contains one or more of In, Zn, Al, Ga, Y, and Sn.

5. The semiconductor device according to claim 1, wherein the rare gas comprises one or more of helium, neon, argon, krypton, and xenon.

6. The semiconductor device according to claim 1, wherein the third insulating film contains one or more of nitrogen, hydrogen, and fluorine.

7. The semiconductor device according to claim 1,

wherein the semiconductor film contains In, Zn, and M, and

wherein M is Al, Ga, Y, or Sn.

8. The semiconductor device according to claim 1,

wherein the semiconductor film comprises a crystal part, and

wherein the crystal part has c-axis alignment.

9. A display device comprising:

the semiconductor device according to claim 1; and

a display element.

10. A display module comprising:

the display device according to claim 9; and

a touch sensor.

11. An electronic device comprising:

the semiconductor device according to claim 1; and

an operation key or a battery.

12. A semiconductor device comprising:

a conductive film;

a first insulating film over the conductive film;

an semiconductor film over the first insulating film;

a second insulating film over the semiconductor film;

a metal oxide film over the second insulating film;

a gate electrode over the metal oxide film; and

a third insulating film over the semiconductor film and the gate electrode,

wherein the semiconductor film comprises a metal oxide,

wherein the semiconductor film comprises a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film, and

wherein the source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

13. The semiconductor device according to claim 12, wherein the conductive film is electrically connected to the gate electrode.

14. The semiconductor device according to claim 12, wherein the metal oxide film is an insulating film, a semiconductor film, or a conductive film.

15. The semiconductor device according to claim 12 further comprising:

a fourth insulating film over the third insulating film;

a source electrode connected to the source region through an opening in the third insulating film and the fourth insulating film; and

a drain electrode connected to the drain region through an opening in the third insulating film and the fourth insulating film.

16. The semiconductor device according to claim 12, wherein the metal oxide film contains one or more of In, Zn, Al, Ga, Y, and Sn.

17. The semiconductor device according to claim 12, wherein the rare gas comprises one or more of helium, neon, argon, krypton, and xenon.

18. The semiconductor device according to claim 12, wherein the third insulating film contains one or more of nitrogen, hydrogen, and fluorine.

19. The semiconductor device according to claim 12,

wherein the semiconductor film contains In, Zn, and M, and

wherein M is Al, Ga, Y, or Sn.

20. The semiconductor device according to claim 12,

wherein the semiconductor film comprises a crystal part, and

wherein the crystal part has c-axis alignment.