Semiconductor Device and Manufacturing Method Thereof
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor;
a first conductor;
a second conductor;
a third conductor;
a first insulator;
a second insulator; and
a third insulator,wherein the first conductor comprises a region where the first conductor and the oxide semiconductor overlap with each other with the first insulator and the third insulator positioned between the first conductor and the oxide semiconductor,wherein the second insulator comprises an opening,wherein the first insulator comprises a region in contact with a side surface of the second insulator in the opening,wherein the first conductor comprises a region facing the side surface of the second insulator with the first insulator positioned between the first conductor and the second insulator,wherein the oxide semiconductor comprises a region where a side surface and a top surface of the oxide semiconductor are in contact with the third insulator,wherein the third insulator comprises a region where a top surface of the third insulator is in contact with the second conductor and a region where the top surface of the third insulator is in contact with the third conductor, andwherein the oxide semiconductor comprises a region where an angle forined between a plane that is parallel to a bottom surface of the oxide semiconductor and the side surface of the oxide semiconductor is greater than or equal to 30° and
less than or equal to 60°
.
1 Assignment
0 Petitions
Accused Products
Abstract
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. The semiconductor device includes an oxide semiconductor; a second insulator; a first conductor and a first insulator that are embedded in the second insulator; a second conductor; a third conductor; and a third insulator covering the oxide semiconductor. The oxide semiconductor includes a region where an angle formed between a plane that is parallel to a bottom surface of the oxide semiconductor and the side surface of the oxide semiconductor is greater than or equal to 30° and less than or equal to 60°.
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Citations
10 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor; a first conductor; a second conductor; a third conductor; a first insulator; a second insulator; and a third insulator, wherein the first conductor comprises a region where the first conductor and the oxide semiconductor overlap with each other with the first insulator and the third insulator positioned between the first conductor and the oxide semiconductor, wherein the second insulator comprises an opening, wherein the first insulator comprises a region in contact with a side surface of the second insulator in the opening, wherein the first conductor comprises a region facing the side surface of the second insulator with the first insulator positioned between the first conductor and the second insulator, wherein the oxide semiconductor comprises a region where a side surface and a top surface of the oxide semiconductor are in contact with the third insulator, wherein the third insulator comprises a region where a top surface of the third insulator is in contact with the second conductor and a region where the top surface of the third insulator is in contact with the third conductor, and wherein the oxide semiconductor comprises a region where an angle forined between a plane that is parallel to a bottom surface of the oxide semiconductor and the side surface of the oxide semiconductor is greater than or equal to 30° and
less than or equal to 60°
. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first oxide semiconductor layer; a second oxide semiconductor layer covering the first oxide semiconductor layer; a gate insulating layer over the second oxide semiconductor layer; and a gate electrode over the gate insulating layer, wherein a side surface of the first oxide semiconductor layer has a taper angle greater than or equal to 30° and
less than or equal to 60°
, andwherein the second oxide semiconductor layer is in contact with a top surface and the side surface of the first oxide semiconductor layer. - View Dependent Claims (9)
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10. A method for manufacturing a semiconductor device comprising the steps of:
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forming a second insulator over a first insulator; forming an oxide semiconductor over the second insulator; forming a first conductor over the oxide semiconductor; forming a first resist mask over the first conductor by a lithography method; etching the first conductor using the first resist mask as an etching mask; etching the oxide semiconductor and the second insulator using the first resist mask and the first conductor as etching masks so that the oxide semiconductor and the second insulator comprise regions where a taper angle of the oxide semiconductor and a taper angle of the second insulator are each greater than or equal to 30° and
less than or equal to 60°
;removing the first resist mask and the first conductor; forming a third insulator over the first insulator, the second insulator, and the oxide semiconductor; performing treatment using plasma comprising oxygen on the third insulator, so that oxygen in the plasma is added to the third insulator as excess oxygen; performing heat treatment, so that the excess oxygen in the third insulator moves to the oxide semiconductor; forining a second conductor over the third insulator; forming a second resist mask over the second conductor by a lithography method; etching the second conductor and the third insulator using the second resist mask as an etching mask; forming a fourth insulator over the first insulator and the second conductor; forming, in the fourth insulator, an opening that exposes the second conductor; forming, in the second conductor, an opening that exposes the third insulator, so that the second conductor is divided into a first conductor layer and a second conductor layer; foiming a fifth insulator over the fourth insulator and the third insulator; forming a third conductor over the fifth insulator; and polishing the third conductor and the fifth insulator, so that the fourth insulator is exposed, wherein the second insulator and the third insulator comprise at least one of main component elements of the oxide semiconductor other than oxygen.
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Specification