UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION

• US 20170025565A1
• Filed: 10/07/2016
• Published: 01/26/2017
• Est. Priority Date: 10/05/2012
• Status: Active Grant

• Current Assignee: Rayvio Corporation
• Original Assignee: Rayvio Corporation
• Inventors: LIAO, Yitao, WALKER, Robert, COLLINS, Doug
• Granted Patent: US 9,793,433 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/0617 AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C23C 14/0641 Nitrides C23C14/0617 takes precedence
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/18 : within the light emitting region
• CPC Class Codes: H01L 33/32 : containing nitrogen

Abstract

A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

Claims

1. A method of fabricating an ultraviolet (UV) light emitting device comprising:

receiving a UV transmissive substrate;

forming a UV transmissive layer upon the UV transmissive substrate, comprising;

forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius; and

forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius; and

forming a UV light emitting layer structure on the UV transmissive layer, comprising;

forming an n-type layer comprising aluminum gallium nitride layer upon the UV transmissive layer;

forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer; and

forming a p-type nitride layer upon the one or more quantum well structures.

2. The method of claim 1 wherein the UV transmissive layer has a thickness within a range of about 10 nm to about 3 microns.

3. The method of claim 1 wherein the UV transmissive layer has a thickness of about 3 microns to 10 microns.

4. The method of claim 1 wherein the UV transmissive layer has transmissivity in the UV wavelength range within a transmissivity range of about 50% to about 99%.

5. The method of claim 1 wherein the method of forming the first UV transmissive layer uses a deposition process selected from a group consisting of:

hydride vapor phase epitaxy, atomic layer deposition, liquid phase epitaxy, physical vapor deposition, sputtering, solid source solution epitaxy.

6. The method of claim 1 wherein the method of forming the second UV transmissive layer uses a deposition process selected from a group consisting of:

metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, molecular beam epitaxy, chemical beam epitaxy.

7. The method of claim 1

wherein the first UV transmissive layer comprises polycrystalline aluminum nitride;

and

wherein the second UV transmissive layer comprises single crystal aluminum nitride.

8. The method of claim 1 wherein the receiving the UV transmissive substrate comprises receiving a substrate selected from a group consisting of:

a quartz substrate, a sapphire substrate, and a free standing single crystal aluminum nitride substrate.

9-29. -29. (canceled)