UV LIGHT EMITTING DEVICES AND SYSTEMS AND METHODS FOR PRODUCTION
First Claim
1. A method of fabricating an ultraviolet (UV) light emitting device comprising:
- receiving a UV transmissive substrate;
forming a UV transmissive layer upon the UV transmissive substrate, comprising;
forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius; and
forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius; and
forming a UV light emitting layer structure on the UV transmissive layer, comprising;
forming an n-type layer comprising aluminum gallium nitride layer upon the UV transmissive layer;
forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer; and
forming a p-type nitride layer upon the one or more quantum well structures.
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Accused Products
Abstract
A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.
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Citations
9 Claims
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1. A method of fabricating an ultraviolet (UV) light emitting device comprising:
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receiving a UV transmissive substrate; forming a UV transmissive layer upon the UV transmissive substrate, comprising; forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius; and forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius; and forming a UV light emitting layer structure on the UV transmissive layer, comprising; forming an n-type layer comprising aluminum gallium nitride layer upon the UV transmissive layer; forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer; and forming a p-type nitride layer upon the one or more quantum well structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9-29. -29. (canceled)
Specification