SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

• US 20170029945A1
• Filed: 07/27/2016
• Published: 02/02/2017
• Est. Priority Date: 07/29/2015
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: KAMAKURA, Tsukasa
• Granted Patent: US 10,655,218 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus includes a gas supply system which supplies a gas into a process chamber, an exhaust system which discharges the gas existing within the process chamber; and a gas supply pipe which supplies the gas into the process chamber via holes, and disposed inside the process chamber, where one end of the gas supply pipe is connected to the gas supply system, the other end of the gas supply pipe is connected to the exhaust system via a pipeline outside the process chamber.

Claims

1. A substrate processing apparatus, comprising:

a gas supply system configured to supply a gas into a process chamber;

an exhaust system configured to discharge the gas existing within the process chamber; and

a gas supply pipe having holes, and configured to supply the gas into the process chamber via the holes, and disposed inside the process chamber, one end of the gas supply pipe connected to the gas supply system, the other end of the gas supply pipe connected to the exhaust system outside the process chamber via a pipeline.

2. The substrate processing apparatus of claim 1, further comprising:

an adjustment valve installed in a route extending from the process chamber to the exhaust system and configured to adjust conductance, the adjustment valve configured to control a gas flow velocity or an exhaust pressure within the gas supply pipe depending on an opening degree of the adjustment valve.

3. The substrate processing apparatus of claim 1, further comprising:

a heating part configured to heat an interior of the process chamber, wherein a concentration of a gas generated as a result of pyrolysis of the gas by the heating part and contributed to a substrate processing is controlled to become uniform in a substrate processing region in which the substrate is disposed.

4. The substrate processing apparatus of claim 1, wherein only a film adhering to an inner wall of the gas supply pipe is removed by supplying a predetermined amount of a cleaning gas from the gas supply system into the gas supply pipe and exhausting the cleaning gas to the exhaust system via the pipeline while suppressing supply of the cleaning gas into the process chamber.

5. The substrate processing apparatus of claim 4, wherein the supply of the cleaning gas into the process chamber is suppressed by setting an internal pressure of the process chamber to become higher than an internal pressure of the gas supply pipe.

6. The substrate processing apparatus of claim 5, further comprising:

a carrier gas supply pipe differing from the gas supply pipe,

wherein the supply of the cleaning gas into the process chamber is suppressed by supplying an inert gas from the carrier gas supply pipe into the process chamber.

7. The substrate processing apparatus of claim 1, wherein the holes are formed in a sidewall of the gas supply pipe at regular intervals, a diameter of the holes is selected from an arbitrary value between 0.1 mm and 5 mm, and the number of the holes is an arbitrary number of three times or less of the number of substrates to be processed.

8. The substrate processing apparatus of claim 1, wherein the gas supply pipe has a U-like shape and the holes are formed in the gas supply pipe at one of the gas supply system side and the exhaust system side.

9. The substrate processing apparatus of claim 1, wherein the gas supply pipe has an I-like shape and a connecting point between the gas supply pipe and the gas supply system is arbitrarily selected from an upper end and a lower end of the gas supply pipe.

10. The substrate processing apparatus of claim 1, wherein the gas supply pipe has an N-like shape and the holes are formed in at least one of a gas-supply-system-side section of the gas supply pipe, an exhaust-system-side section of the gas supply pipe and a center-side section of the gas supply pipe.

11. The substrate processing apparatus of claim 4, wherein the cleaning gas contains at least one halogen element selected from a group consisting of fluorine (F), chlorine (Cl), bromine (Br) and iodine (I).

12. A method of manufacturing a semiconductor device, comprising:

loading a substrate into a process chamber of a substrate processing apparatus including a gas supply system configured to supply a gas into the process chamber, an exhaust system configured to discharge the gas existing within the process chamber, and a gas supply pipe having holes, and configured to supply the gas into the process chamber via the holes, and disposed inside the process chamber, one end of the gas supply pipe connected to the gas supply system, the other end of the gas supply pipe connected to the exhaust system outside the process chamber via a pipeline; and

supplying a precursor gas into the process chamber by exhausting the precursor gas to the exhaust system via the pipeline while supplying the precursor gas from the holes into the process chamber.

13. A non-transitory computer-readable recording medium storing a program that causes a computer to perform:

loading a substrate into a process chamber of a substrate processing apparatus including a gas supply system configured to supply a gas into the process chamber, an exhaust system configured to discharge the gas existing within the process chamber, and a gas supply pipe having holes, and configured to supply the gas into the process chamber via the holes, and disposed inside the process chamber, one end of the gas supply pipe connected to the gas supply system, the other end of the gas supply pipe connected to the exhaust system outside the process chamber via a pipeline; and

supplying a precursor gas into the process chamber by exhausting the precursor gas to the exhaust system via the pipeline while supplying the precursor gas from the holes into the process chamber.