METHOD AND APPARATUS FOR CALCULATING THE JUNCTION TEMPERATURE OF AN RF POWER MOSFET

• US 20170030778A1
• Filed: 03/03/2015
• Published: 02/02/2017
• Est. Priority Date: 03/04/2014
• Status: Abandoned Application

• Current Assignee: Koninklijke Philips N.V.
• Original Assignee: Koninklijke Philips N.V.
• Inventors: ZENG, KEQIU, WANG, TAO, SENAN, KAILAS
• Application Number:
  US15/122,955
• Publication Number:
  US 20170030778A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: G01K 7/42 Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
• CPC Class Codes: G01R 33/3614 RF power amplifiers

Abstract

There are provided a method and apparatus for calculating the junction temperature of an RF power MOSFET. The method for calculating the junction temperature of an RF power MOSFET, comprising steps of: establishing a transient thermal impedance model of the RF power MOSFET in analog domain; calculating a transfer function in time domain of the transient thermal impedance model using bilinear transformation; establishing a junction temperature compensation model in digital domain based on the transfer function in time domain of the transient thermal impedance model with a sampling frequency and a type of 2^nd order IIR filter structure; and calculating the junction temperature of the RF power MOSFET by inputting an actual input to the junction temperature compensation model. The present invention improves accuracy in determining the junction temperature of an RF power MOSFET.

Claims

1. A method for calculating the junction temperature of an RF power MOSFET, comprising steps of:

establishing a transient thermal impedance model of the RF power MOSFET in analog domain;

calculating a transfer function in time domain of the transient thermal impedance model using bilinear transformation;

selecting a preferable sampling frequency and a preferable type of second order infinite impulse response (IIR) filter structure to establish a junction temperature compensation model in digital domain based on the transfer function in time domain of the transient thermal impedance model; and

calculating the junction temperature of the RF power MOSFET by inputting an actual input to the junction temperature compensation model.

2. The method according to claim 1, wherein the step of calculating a transfer function in time domain of the transient thermal impedance model comprises steps of:

calculating a transfer function in frequency domain of the transient thermal impedance model;

converting the transfer function in frequency domain of the transient thermal impedance model into the transfer function in time domain of the transient thermal impedance model using bilinear transformation.

3. The method according to claim 1, wherein the step of selecting a preferable sampling frequency comprises steps of:

establishing a plurality of junction temperature compensation models with a plurality of sampling frequencies;

calculating a plurality of junction temperatures using the plurality of established junction temperature compensation models; and

selecting the sampling frequency that results in the minimum difference between the predetermined theoretical temperature value and the calculated junction temperatures as the preferable sampling frequency.

4. The method according to claim 1, wherein in the step of selecting the preferable sampling frequency for establishing the junction temperature compensation model, the preferable sampling frequency is selected as 10 KHz.

5. The method according to claim 1, wherein the type of second order IIR filter structure is selected as direct form II IIR filter structure.

6. The method according to claim 1, wherein the step of calculating the junction temperature of the RF power MOSFET is implemented by software simulation.

7. The method according to claim 1, wherein the step of calculating the junction temperature of the RF power MOSFET is implemented by FPGA.

16. The method according to claim 1, wherein the step of selecting a preferable type of 2nd order IIR filter structure comprises steps of:

establishing a plurality of junction temperature compensation models with a plurality of types of the second order infinite impulse response (IIR) filter structure;

calculating a plurality of junction temperatures using the plurality of established junction temperature compensation models; and

selecting the type of the second order IIR filter structure that results in the minimum difference between the predetermined theoretical temperature value and the calculated junction temperatures as the preferable type of 2nd order IIR filter structure.

8. An apparatus for calculating the junction temperature of an RF power MOSFET, comprising:

a first establishing unit configured to establish a transient thermal impedance model of the RF power MOSFET in analog domain;

a first calculating unit configured to calculate a transfer function in time domain of the transient thermal impedance model using bilinear transformation;

a second establishing unit configured to establish a junction temperature compensation model in digital domain based on the transfer function in time domain of the transient thermal impedance model by selecting a preferable sampling frequency and a preferable type of a second order infinite impulse response (IIR) filter structure; and

a second calculating unit configured to calculate the junction temperature of the RF power MOSFET by inputting an actual input to the junction temperature compensation model.

9. The apparatus according to claim 8, wherein the first calculating unit comprises:

a third calculating unit configured to calculate a transfer function in frequency domain of the transient thermal impedance model;

a converting unit configured to convert the transfer function in frequency domain of the transient thermal impedance model into the transfer function in time domain of the transient thermal impedance model using bilinear transformation.

11. The apparatus according to claim 9, wherein the preferable sampling frequency for establishing the junction temperature compensation model is selected as 10 KHz.

12. The apparatus according to claim 9, wherein the preferable type of second order IIR filter structure for establishing the junction temperature compensation model is selected as direct form II IIR filter structure.

13. The apparatus according to claim 8, wherein the second calculating unit is configured to calculate the junction temperature of the RF power MOSFET by software simulation.

14. The apparatus according to claim 8, wherein the second calculating unit is configured to calculate the junction temperature of the RF power MOSFET by FPGA.

15. A magnetic resonance imaging (MRI) system comprising a MRI amplifier, wherein the MRI system further comprises the apparatus according to claim 8 for calculating the junction temperature of at least one RF power MOSFET used in the MRI amplifier.

10. (canceled)