Optical Sensing Device and Fabricating Method Thereof

• US 20170032167A1
• Filed: 05/18/2016
• Published: 02/02/2017
• Est. Priority Date: 07/31/2015
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: CHEN, Ching-Wen, Cho, An-Thung
• Granted Patent: US 9,773,914 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0274 Photolithographic processes
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78651 Silicon transistors H01L29/78606 - H01L29/78645 take precedence
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H10K 59/60 OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes

Abstract

An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

Claims

1. An optical sensing device comprising:

a substrate;

at least one thin film transistor disposed on the substrate, the thin film transistor comprising;

a gate electrode disposed on the substrate;

a channel layer;

a gate dielectric layer disposed between the gate electrode and the channel layer;

a source electrode; and

a drain electrode, wherein the source electrode and the drain electrode disposed on the opposite sides of the channel layer respectively;

at least one optical sensor comprising;

a first metal electrode disposed on the gate dielectric layer and connected to the drain electrode;

an optical sensing layer disposed on the first metal electrode; and

a first transparent electrode disposed on the optical sensing layer;

a planar layer covering at least a portion of the thin film transistor and the optical sensor; and

at least one organic light emitting diode disposed on the planar layer, wherein an orthogonal project of the organic light emitting diode does not overlap that of the optical sensor on the substrate, the organic light emitting diode comprising;

a second metal electrode disposed on the planar layer and electrically coupled to one of a gate line and a data line;

an organic electroluminescent layer disposed on the second metal electrode; and

a second transparent electrode disposed on the organic electroluminescent layer and electrically coupled to the other one of the gate line and the data line.

2. The optical sensing device of claim 1, wherein the drain electrode and the first metal electrode are made of the same layer and photolithographed by the same mask.

3. The optical sensing device of claim 1, wherein the orthogonal project of the second metal electrode is overlapped with at least a portion of that of the channel layer on the substrate.

4. The optical sensing device of claim 1, wherein the orthogonal project of the second metal electrode is substantially complementary to that of the optical sensing layer on the substrate.

5. The optical sensing device of claim 1, wherein the number of the organic light emitting diode is more than one and the organic light emitting diodes are passive organic light emitting diodes.

6. The optical sensing device of claim 1, wherein the material of the optical sensing layer is silicon rich oxide, silicon rich nitride or silicon rich carbide.

7. The optical sensing device of claim 1, wherein the substrate is a flexible substrate.

8. The optical sensing device of claim 1, wherein an edge of the optical sensing layer shrinks a distance from that of the first metal electrode, and the distance is smaller than 1.5 micrometers.

9. The optical sensing device of claim 1, wherein an edge of the optical sensing layer is aligned with that of the first metal electrode.

10. The optical sensing device of claim 1, wherein the edge of the optical sensing layer is protruded from that of the first metal electrode.

11. A fabricating method of an optical sensing device comprising:

forming a gate electrode on a substrate;

forming a gate dielectric layer on the gate electrode;

forming a channel layer on the gate dielectric layer;

forming a metal layer on the channel layer and patterning the metal layer, so that the patterned metal layer forms a source electrode, a drain electrode and a first metal electrode, wherein the source electrode and the drain electrode are located on the opposite sides of the channel layer, wherein the first metal electrode is connected to the drain electrode and wherein the gate electrode, the gate dielectric layer, the channel layer, the source electrode and the drain electrode collectively form a thin film transistor;

forming an optical sensing layer on the first metal electrode;

forming a first transparent layer on the optical sensing layer;

forming a planar layer covering at least a portion of the thin film transistor and the first transparent layer; and

forming an organic light emitting diode on the planar layer, comprising;

forming a second metal electrode on the planar layer;

forming an organic electroluminescent layer on the second metal electrode; and

forming a second transparent layer on the organic electroluminescent layer.

12. The fabricating method of claim 11, wherein the material of the optical sensing layer is silicon rich oxide, silicon rich nitride or silicon rich carbide.

13. The fabricating method of claim 11, wherein the substrate is a flexible substrate.

14. The fabricating method of claim 11, wherein the orthogonal project of the organic light emitting diode does not overlap that of the optical sensor on the substrate.