SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
First Claim
1. A manufacturing method of a semiconductor device, the method comprising:
- forming a trench in a front surface of a semiconductor substrate;
forming a gate insulating film covering an inner surface of the trench;
depositing a first fill material on a side surface of the gate insulating film in the trench;
depositing a second fill material having a higher etching resistance than the first fill material on a side surface of the first fill material in the trench;
removing a part of the first fill material in the trench and a part of the second fill material in the trench by etching from a front surface side of the semiconductor substrate so as to position a front surface of the second fill material in the trench at a shallower position than a front surface of the first fill material in the trench; and
forming a diffusion layer after the etching by an ion implantation to the semiconductor substrate from the front surface side of the semiconductor substrate.
2 Assignments
0 Petitions
Accused Products
Abstract
Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.
9 Citations
10 Claims
-
1. A manufacturing method of a semiconductor device, the method comprising:
-
forming a trench in a front surface of a semiconductor substrate; forming a gate insulating film covering an inner surface of the trench; depositing a first fill material on a side surface of the gate insulating film in the trench; depositing a second fill material having a higher etching resistance than the first fill material on a side surface of the first fill material in the trench; removing a part of the first fill material in the trench and a part of the second fill material in the trench by etching from a front surface side of the semiconductor substrate so as to position a front surface of the second fill material in the trench at a shallower position than a front surface of the first fill material in the trench; and forming a diffusion layer after the etching by an ion implantation to the semiconductor substrate from the front surface side of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A semiconductor device comprising:
-
a semiconductor substrate; a trench provided in a front surface of the semiconductor substrate; a gate insulating film covering an inner surface of the trench; and a gate electrode provided on an inner side of the gate insulating film, wherein a front surface of the gate electrode is provided at a position deeper than the front surface of the semiconductor substrate, and a front surface of a first part of the gate electrode, which is located at a center in a width direction of the trench, is provided at a position shallower than a front surface of a second part of the gate electrode which is in contact with the gate insulating film. - View Dependent Claims (8, 9, 10)
-
Specification