METAL OXIDE TFT WITH IMPROVED SOURCE/DRAIN CONTACTS AND RELIABILITY
9 Assignments
0 Petitions
Accused Products
Abstract
A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.
32 Citations
47 Claims
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1-30. -30. (canceled)
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31. A stable metal oxide semiconductor thin film transistor with ohmic source/drain contacts and high reliability comprising:
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a substrate with a gate, a layer of gate insulator adjacent the gate, and a layer of metal oxide semiconductor material positioned on the layer of gate insulator opposite the gate; and
,a patterned etch stop passivation layer on selected portions of the layer of metal oxide semiconductor material defining not covered source/drain areas, the carrier concentration in the source/drain areas of the metal oxide semiconductor not covered by the etch stop layer being increased by heating together with all underlying layers at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience; overlying and spaced apart source/drain metals formed on the source/drain areas, respectively, to make ohmic contact in a thin film transistor configuration; the thin film transistor on the substrate being heated in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to desired level; and additional passivation layer(s) positioned on top of the thin film transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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Specification