X-RAY WINDOW

• US 20170040138A1
• Filed: 08/03/2016
• Published: 02/09/2017
• Est. Priority Date: 08/03/2015
• Status: Abandoned Application

• Current Assignee: UHV Technologies Incorporated
• Original Assignee: UHV Technologies Incorporated
• Inventors: Lee, Geunhee, Kumar, Nalin
• Application Number:
  US15/227,594
• Publication Number:
  US 20170040138A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/27 Diamond only
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: H01J 5/18 Windows permeable to X-rays, gamma-rays, or particles

Abstract

An x-ray window, which may be utilized within an x-ray source or an x-ray detector is disclosed, and a method for manufacturing the same. The x-ray window may be permeable to soft x-rays. The x-ray window may have at least one surface in contact with a pressure essentially equal that of a vacuum. The x-ray window may be multilayered with a thickness of less than or equal to one micron.

Claims

1. A method for making an x-ray window comprising:

depositing one or more layers of x-ray transmissive materials onto a silicon substrate; and

patterning and etching the silicon substrate to form a ring structure having an aperture formed therethrough so that only the one or more layers of x-ray transmissive materials cover the aperture.

2. The method as recited in claim 1, wherein the silicon ring structure has a thickness of about 200 microns-500 microns.

3. The method as recited in claim 1, wherein the one or more layers of x-ray transmissive layers have a total thickness of ≦

1 micron.

4. The method as recited in claim 1, wherein the one or more layers of x-ray transmissive layers have a total thickness of ≦

0.5 microns.

5. The method as recited in claim 1, wherein the one or more layers of x-ray transmissive materials comprise a base layer and a visible light blocking layer.

6. The method as recited in claim 1, wherein the aperture has a diameter of about ≧

5 mm.

7. The method as recited in claim 1, wherein the one or more layers include a silicon nitride layer.

8. The method as recited in claim 7, wherein the one or more layers include a diamond thin film.

9. The method as recited in claim 8, wherein the one or more layers of x-ray transmissive layers have a total thickness of ≦

1 micron.

17. The x-ray window as recited in claim 1, wherein the one or more layers of materials are configured to have a photon energy transmission of >

50% for photon energies of 0.8 keV.

18. The x-ray window as recited in claim 1, wherein the one or more layers of materials do not include any supporting structures spanning the aperture.

10. An x-ray window comprising:

a silicon ring; and

one or more layers of x-ray transmissive materials completely covering an aperture formed in the silicon ring, wherein the one or more layers have a total thickness for passage of x-rays of ≦

1 micron.

11. The x-ray window as recited in claim 10, wherein the one or more layers have a total thickness tor passage of x-rays of ≦

0.5 microns.

12. The x-ray window as recited in claim 11, wherein the one or more layers have a total thickness for passage of x-rays of ≦

0.5 microns.

13. The x-ray window as recited in claim 10, wherein a thickness of the silicon ring is about 200 mm-500 mm.

14. The x-ray window as recited in claim 10, wherein the aperture has a diameter of ≧

5 mm.

15. The x-ray window as recited in claim 10, wherein the one or more layers comprise a silicon nitride layer and a diamond thin film.

16. The x-ray window as recited in claim 10, wherein the materials are selected from the group consisting of Si₃N₄, C, B, BN, CN, CNO, BNO, BO₂, LiH, LiF, Al, UNCD, and any combination thereof.

19. The x-ray window as recited in claim 10, wherein the one or more layers consist of a silicon nitride layer and a diamond thin film, wherein a total thickness of the one or more layers is less than or equal to 7 microns.

20. An x-ray window consisting of:

a silicon ring; and

one or more layers of x-ray transmissive materials completely covering an aperture formed in the silicon ring, wherein the one or more layers have a total thickness for passage of x-rays of ≦

1 micron.