LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A light-emitting device, comprising:
- a substrate having a top surface, wherein the top surface comprises a first portion and a second portion;
a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion and exposes the second portion;
a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface;
wherein the first side wall and the first portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β
between thereof.
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Accused Products
Abstract
A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.
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Citations
20 Claims
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1. A light-emitting device, comprising:
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a substrate having a top surface, wherein the top surface comprises a first portion and a second portion; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion and exposes the second portion; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the first portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β
between thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A manufacturing method of a light-emitting device, comprising steps of:
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providing a growth substrate; epitaxially growing a semiconductor stack on the growth substrate, wherein the semiconductor stack comprises a first semiconductor stack on the growth substrate and a second semiconductor stack on the first semiconductor stack; removing a portion of the second semiconductor stack to form a plurality of light-emitting sections and expose the first semiconductor stack; treating the exposed portion of the first semiconductor stack to form a V-shape region for exposing the growth substrate; etching the V-shape region; and dividing the growth substrate along the V-shape region to form a plurality of light-emitting chips. - View Dependent Claims (18, 19, 20)
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Specification