SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20170040515A1
• Filed: 06/16/2016
• Published: 02/09/2017
• Est. Priority Date: 08/06/2015
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: LEE, Jin Bock, LEE, Su Yeol, JOO, Dong Hyuk
• Application Number:
  US15/184,737
• Publication Number:
  US 20170040515A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode. The second finger electrode is disposed in the trench and connected to the current spreading layer.

Claims

1. A semiconductor light emitting device comprising:

a semiconductor stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer;

a first insulating layer disposed on an inner sidewall of the trench;

a current spreading layer disposed on the second conductivity-type semiconductor layer;

a first finger electrode disposed on the portion of the first conductivity-type semiconductor layer;

a second insulating layer disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode; and

a second finger electrode disposed in the trench and connected to the current spreading layer.

2. The semiconductor light emitting device of claim 1, wherein the second finger electrode is disposed on the second insulating layer to overlap the first finger electrode.

3. The semiconductor light emitting device of claim 2, wherein the second finger electrode has a width greater than a width of the first finger electrode.

4. The semiconductor light emitting device of claim 2, wherein the current spreading layer extends into the trench along an upper surface of the first insulating layer.

5. The semiconductor light emitting device of claim 4, wherein a region in which the second finger electrode and the current spreading layer are connected to each other is located in the trench.

6. The semiconductor light emitting device of claim 1, wherein the second finger electrode is disposed on the second insulating layer and has an extension portion extending in a width direction to connect to a portion of the current spreading layer disposed outside of the trench.

7. The semiconductor light emitting device of claim 6, wherein the extension portion extending in the width direction is provided as a plurality of extension portions, and the plurality of extension portions are arranged along a length direction of the second finger electrode and spaced apart from each other.

8. The semiconductor light emitting device of claim 1, wherein the current spreading layer extends into the trench along an upper surface of the first insulating layer, and the second finger electrode is disposed on a portion of the current spreading layer located in the trench.

9. The semiconductor light emitting device of claim 8, wherein the second finger electrode comprises two branched electrodes respectively disposed on portions of the current spreading layer that are adjacent to the first finger electrode.

10. The semiconductor light emitting device of claim 9, wherein a portion of the second finger electrode is located on a portion of the current spreading layer disposed on an upper surface of the second conductivity-type semiconductor layer.

11. The semiconductor light emitting device of claim 1, wherein the first insulating layer extends to a portion of an upper surface of the second conductivity-type semiconductor layer being adjacent to the trench.

12. The semiconductor light emitting device of claim 1, wherein the current spreading layer comprises a transparent electrode layer.

13. The semiconductor light emitting device of claim 12, wherein the current spreading layer comprises at least one of indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GI), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), In₄Sn₃O₁₂, and Zn₍₁₋

x)MgO (zinc magnesium oxide, 0≦

x≦

1).

14. The semiconductor light emitting device of claim 1, further comprising a first electrode pad connected to the first finger electrode and a second electrode pad connected to the second finger electrode.

15. The semiconductor light emitting device of claim 1, wherein a portion of the second finger electrode is disposed on the second conductivity-type semiconductor layer,

the semiconductor light emitting device further comprising a current blocking layer disposed between a portion of the second finger electrode and the second conductivity-type semiconductor layer.

16. A semiconductor light emitting device comprising:

a semiconductor stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer;

a first insulating layer disposed on an inner sidewall of the trench;

a current spreading layer disposed on the second conductivity-type semiconductor layer and extending along an upper surface of the first insulating layer;

a first finger electrode disposed on the exposed portion of the first conductivity-type semiconductor layer;

a second insulating layer disposed in the trench to cover a portion of the current spreading layer together with the first finger electrode; and

a second finger electrode disposed on the second insulating layer and connected to the current spreading layer.

17. The semiconductor light emitting device of claim 16, wherein the second finger electrode has a width greater than a width of the first finger electrode, and the second finger electrode has a region overlapping the first finger electrode in a length direction.

18. The semiconductor light emitting device of claim 16, wherein the second finger electrode is disposed on a portion of the current spreading layer located in the trench.

19. The semiconductor light emitting device of claim 16, wherein the first insulating layer comprises an extension portion extending toward a portion of an upper surface of the second conductivity-type semiconductor layer that is adjacent to the trench.

20. A semiconductor light emitting device comprising:

a semiconductor stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer;

a current spreading layer disposed on an upper surface of the second conductivity-type semiconductor layer;

a first finger electrode disposed on the exposed portion of the first conductivity-type semiconductor layer in the trench;

an insulating layer disposed in the trench to cover the first finger electrode; and

a second finger electrode disposed on an upper surface of the insulating layer and connected to a portion of the current spreading layer being adjacent to the trench.

21-32. -32. (canceled)