SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising:
- a SiC substrate;
a SiC layer provided on the SiC substrate, the SiC layer including a first trench at a side of front face of the SiC layer, the first trench including a side face and a bottom face;
a first conductivity type first SiC region provided in the SiC layer;
a second conductivity type second SiC region provided between the first SiC region and the SiC substrate in the SiC layer;
a first conductivity type third SiC region provided between the second SiC region and the SiC substrate in the SiC layer, a boundary between the second SiC region and the third SiC region disposed at a side of the side face of the first trench, the boundary including a first region, a distance between the first region and the front face of the SiC layer increasing as a distance from the side face of the first trench to the first region increasing, a distance between the side face of the first trench to an end of the first region close to the first trench being 0 μ
m or more and 0.3 μ
m or less;
a gate insulating film provided on the side face and the bottom face of the first trench; and
a gate electrode, the gate insulating film disposed between the gate electrode and the first SiC region, the second SiC region, and the third SiC region.
1 Assignment
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Accused Products
Abstract
A semiconductor device according to embodiments includes, a SiC substrate, SiC layer, a trench having a side face and a bottom face, a first conductivity type first SiC region, a second conductivity type second SiC region between the first SiC region and the SiC substrate, a first conductivity type third SiC region between the second SiC region and the SiC substrate, a boundary between the second SiC region and the third SiC region provided at a side of the side face, the boundary including a first region, a distance between the first region and a front face of the SiC layer increasing as a distance from the side face to the first region increasing, and distance from the side face to the first region being 0 μm or more and 0.3 μm or less, a gate insulating film and gate insulating film.
9 Citations
20 Claims
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1. A semiconductor device, comprising:
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a SiC substrate; a SiC layer provided on the SiC substrate, the SiC layer including a first trench at a side of front face of the SiC layer, the first trench including a side face and a bottom face; a first conductivity type first SiC region provided in the SiC layer; a second conductivity type second SiC region provided between the first SiC region and the SiC substrate in the SiC layer; a first conductivity type third SiC region provided between the second SiC region and the SiC substrate in the SiC layer, a boundary between the second SiC region and the third SiC region disposed at a side of the side face of the first trench, the boundary including a first region, a distance between the first region and the front face of the SiC layer increasing as a distance from the side face of the first trench to the first region increasing, a distance between the side face of the first trench to an end of the first region close to the first trench being 0 μ
m or more and 0.3 μ
m or less;a gate insulating film provided on the side face and the bottom face of the first trench; and a gate electrode, the gate insulating film disposed between the gate electrode and the first SiC region, the second SiC region, and the third SiC region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device, comprising:
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a SiC substrate; a SiC layer provided on the SiC substrate, the SiC layer including a first trench at a side of front face of the SiC layer, the first trench including a side face and a bottom face; a first conductivity type first SiC region provided in the SiC layer; a second conductivity type second SiC region provided between the first SiC region and the SiC substrate in the SiC layer; a first conductivity type third SiC region provided between the second SiC region and the SiC substrate in the SiC layer, a boundary between the second SiC region and the third SiC region disposed at a side of the side face of the first trench, the boundary including a first region, the first region having a first position and a second position, the first position being closer to the first trench than the second position, a distance between the second position and the front face of the SiC layer being larger than a distance between the first position and the front face of the SiC layer, a distance between the side face of the first trench to an end of the first region close to the first trench being 0 μ
m or more and 0.3 μ
m or less;a gate insulating film provided on the side face and the bottom face of the first trench; and a gate electrode, the gate insulating film disposed between the gate electrode and the first SiC region, the second SiC region, and the third SiC region.
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20. A semiconductor device, comprising:
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a SiC substrate; a SiC layer provided on the SiC substrate, the SiC layer including a first trench at a side of front face of the SiC layer, the first trench including a side face and a bottom face; a first conductivity type first SiC region provided in the SiC layer; a second conductivity type second SiC region provided between the first SiC region and the SiC substrate in the SiC layer; a first conductivity type third SiC region provided between the second SiC region and the SiC substrate in the SiC layer, a boundary between the second SiC region and the third SiC region disposed at a side of the side face of the first trench, the boundary including a first region, the first region having a first position and a second position, the first position being closer to the first trench than the second position, a distance between the second position and a back face of the SiC substrate being smaller than a distance between the first position and the back face of the SiC substrate, a distance between the side face of the first trench to an end of the first region close to the first trench being 0 μ
m or more and 0.3 μ
m or less;a gate insulating film provided on the side face and the bottom face of the first trench; and a gate electrode, the gate insulating film disposed between the gate electrode and the first SiC region, the second SiC region, and the third SiC region.
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Specification