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ATOMIC LAYER ETCHING OF TUNGSTEN AND OTHER METALS

  • US 20170053810A1
  • Filed: 08/17/2016
  • Published: 02/23/2017
  • Est. Priority Date: 08/19/2015
  • Status: Active Grant
First Claim
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1. A method of etching a metal on a substrate, the metal being selected from tungsten (W) and cobalt (Co), comprising:

  • (a) exposing a surface of the metal to a halide chemistry to form a modified halide-containing surface layer; and

    (b) applying a bias voltage to the substrate while exposing the modified halide-containing surface layer to a plasma to thereby remove the modified halide-containing surface layer.

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