SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
First Claim
Patent Images
1. A semiconductor device, comprisinga first polyimide film;
- a wiring formed over the first polyimide film;
a conductor pattern formed over the first polyimide film;
a second polyimide film that covers the wiring and the conductor pattern; and
an opening portion that exposes a portion of the wiring in the second polyimide film,wherein, in plan view, the conductor pattern is comprised of a closed pattern surrounding the wiring, while having a space therebetween.
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Accused Products
Abstract
To provide a semiconductor device having improved reliability. The semiconductor device is equipped with a first polyimide film, rewirings formed over the first polyimide film, first and second dummy patterns formed over the first polyimide film, a second polyimide film that covers the rewirings and the dummy patterns, and an opening portion that exposes a portion of the rewirings in the second polyimide film. The first dummy pattern is, in plan view, comprised of a closed pattern surrounding the rewirings while having a space therebetween.
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Citations
18 Claims
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1. A semiconductor device, comprising
a first polyimide film; -
a wiring formed over the first polyimide film; a conductor pattern formed over the first polyimide film; a second polyimide film that covers the wiring and the conductor pattern; and an opening portion that exposes a portion of the wiring in the second polyimide film, wherein, in plan view, the conductor pattern is comprised of a closed pattern surrounding the wiring, while having a space therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a first polyimide film; a plurality of wirings formed over the first polyimide film; a plurality of conductor patterns formed over the first polyimide film; a second polyimide film that covers the wirings and the conductor patterns; and an opening portion that exposes a portion of each of the wirings in the second polyimide film, wherein, in plan view, a first conductor pattern, among the conductor patterns, is comprised of a closed pattern surrounding a first wiring group, among the wirings, while having a space therebetween. - View Dependent Claims (10, 11, 12)
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13. A method of manufacturing a semiconductor device, comprising the steps of:
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(a) forming an insulating film that covers a pad; (b) forming, in the insulating film, a first opening portion exposing a portion of a surface of the pad; (c) forming a first polyimide film over the insulating film; (d) forming, in the first polyimide film, a second opening portion to couple with the first opening portion; (e) forming a wiring that fills the first opening portion and the second opening portion and is allocated over the first polyimide film, and a conductor pattern that be allocated over the first polyimide film; (f) forming a second polyimide film that covers the wiring and the conductor pattern; and (g) forming, in the second polyimide film, a third opening portion that exposes a portion of the wiring, wherein in the step (e), the conductor pattern is comprised of a closed pattern that surrounds, in plan view, the wiring, while having a space therebetween. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification