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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

  • US 20170062362A1
  • Filed: 08/09/2016
  • Published: 03/02/2017
  • Est. Priority Date: 08/26/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprisinga first polyimide film;

  • a wiring formed over the first polyimide film;

    a conductor pattern formed over the first polyimide film;

    a second polyimide film that covers the wiring and the conductor pattern; and

    an opening portion that exposes a portion of the wiring in the second polyimide film,wherein, in plan view, the conductor pattern is comprised of a closed pattern surrounding the wiring, while having a space therebetween.

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