METHOD MANUFACTURING LIGHT EMITTING DIODE HAVING SUPPORTING LAY7ER ATTACHED TO TEMPORARY ADHESIVE

• US 20170062650A1
• Filed: 08/27/2015
• Published: 03/02/2017
• Est. Priority Date: 08/27/2015
• Status: Active Grant

• Current Assignee: Mikro Mesa Technology Co., Ltd.
• Original Assignee: Mikro Mesa Technology Co., Ltd.
• Inventors: CHEN, Li-Yi, LIN, Shih-Chyn, LEE, Hsin-Wei, CHANG, Pei-Yu
• Granted Patent: US 10,468,361 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29105 Gallium [Ga] as principal constituent
• CPC Class Codes: H01L 2224/29109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29113 Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/29116 Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/29166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/29186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/45186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/75725 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75735 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75745 : in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/83005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83193 : wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 24/00 : Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01048 : Cadmium [Cd]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0543 : 13th Group
• CPC Class Codes: H01L 2924/0544 : 14th Group
• CPC Class Codes: H01L 2924/0549 : being a combination of two or more materials provided in the groups H01L2924/0531 - H01L2924/0546
• CPC Class Codes: H01L 2924/0635 : Acrylic polymer
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0715 : Polysiloxane
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 : Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/60 : Reflective elements

Abstract

A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young'"'"'s modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Claims

1. A method for manufacturing at least one light emitting diode (LED), the method comprising:

epitaxially growing at least one light emitting diode (LED) structure on a growth substrate, wherein the LED structure has a top surface away from the growth substrate;

forming at least one supporting layer on the LED structure;

temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, wherein the supporting layer has a Young'"'"'s modulus greater than that of the adhesive layer, and a shortest distance between the adhesive layer and the growth substrate is greater than a shortest distance between the top surface of the LED structure and the growth substrate; and

removing the growth substrate from the LED structure.

2. The method of claim 1, wherein the removing is performed by laser lift-off, a combination of the laser lift-off and chemical lift-off, or a combination of the laser lift-off and mechanical lift-off.

3. The method of claim 1, further comprising:

absorbing at least one vibration wave created by the removing through the supporting layer.

4. The method of claim 1, wherein the supporting layer is made of metal, alloy, or a transparent conductive material.

5. The method of claim 4, wherein a plurality of the supporting layers are stacked together, wherein the supporting layers are made of the same or different materials.

6. The method of claim 1, wherein the supporting layer is reflective.

7. The method of claim 1, wherein the supporting layer has a thickness greater than or equal to 2 μ

m.

8. The method of claim 1, further comprising:

chipping at least the LED structure into a plurality of micro-LED structures.

9. The method of claim 8, wherein the chipping is performed before the removing.

10. The method of claim 8, wherein the chipping is performed after the removing.

11. The method of claim 8, wherein the chipping extends into the supporting layer;

further comprising;

reducing adhesion force of the adhesive layer to the chipped supporting layer while remaining the chipped supporting layer within a controllable position on the adhesive layer; and

transferring at least a part of the micro-LED structures with the chipped supporting layer from the adhesive layer to a receiving substrate after the adhesion force of the adhesive layer is reduced.

12. The method of claim 11, further comprising:

forming a eutectic system, a soldering contact, or a transient liquid phase sintering system of the chipped supporting layer and an bonding electrode of the receiving substrate after the micro-LED structures are transferred to the receiving substrate.

13. The method of claim 11, wherein the adhesion force of the adhesive layer is reduced by an electric field, electromagnetic radiation, heat, ultrasound, mechanical force, pressure, chip lifting, or combinations thereof.

14. The method of claim 1, wherein the LED structure comprises:

a first type semiconductor layer; and

a second type semiconductor layer joined with the first type semiconductor layer.

15. The method of claim 14, wherein the LED structure comprises:

at least one current controlling structure joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling structure having at least one opening therein.

16. The method of claim 15, wherein the current controlling structure is a dielectric layer.

17. An intermediate light emitting diode (LED) comprising:

a carrier substrate;

at least one LED structure;

a supporting layer disposed between the LED structure and the carrier substrate; and

an adhesive layer temporarily adhering a combination of the supporting layer and the LED structure to the carrier substrate, wherein the supporting layer has a Young'"'"'s modulus greater than that of the adhesive layer.

18. The intermediate LED of claim 17, wherein the supporting layer is made of metal, alloy, or a transparent conductive material.

19. The intermediate LED of claim 17, wherein the supporting layer is reflective.

20. The intermediate LED of claim 17, wherein the supporting layer has a thickness greater than or equal to about 2 μ

m.