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NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME

  • US 20170062658A1
  • Filed: 11/11/2016
  • Published: 03/02/2017
  • Est. Priority Date: 04/25/2014
  • Status: Active Grant
First Claim
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1. A nitride semiconductor element comprising:

  • a sapphire substrate comprising a plurality of projections disposed on a surface thereof at a c-plane side; and

    a semiconductor layer made of a nitride semiconductor and disposed on the surface of the sapphire substrate,wherein each projection comprises a circular bottom periphery, and an upper part that has a triangular pyramid shape, andwherein respective centers of the projections are positioned at lattice points of a triangular lattice.

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