METHOD FOR FORMING PATTERNS AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE USING THE SAME
First Claim
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1. A method for forming a pattern, the method comprising:
- forming an etch target layer on a substrate;
patterning the etch target layer to form patterns; and
performing a pre-oxidation trim process a plurality of times,the pre-oxidation trim process including;
performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and
performing a sputter etch process to remove at least a portion of the insulating layer.
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Abstract
A method for forming a pattern, the method including forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer.
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Citations
26 Claims
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1. A method for forming a pattern, the method comprising:
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forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including; performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer. - View Dependent Claims (2, 3, 5, 6, 7, 8, 10, 11, 12)
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4. (canceled)
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9. (canceled)
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13-14. -14. (canceled)
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15. A method for manufacturing a magnetic memory device, the method comprising:
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forming a magnetic tunnel junction layer on a substrate; patterning the magnetic tunnel junction layer to form magnetic tunnel junction patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including; performing an oxidation process to form an insulating layer on a sidewall of each of the magnetic tunnel junction patterns; and performing a sputter etch process to remove at least a portion of the insulating layer. - View Dependent Claims (17, 18, 19, 20, 21, 23)
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16. (canceled)
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22. (canceled)
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24. A method for manufacturing a device, the method comprising:
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separating magnetic tunnel junction patterns from each other; oxidizing remaining metal material on sidewalls of the magnetic tunnel junction patterns after the separating; and trimming oxidized metal material from the sidewalls of the magnetic tunnel junction patterns. - View Dependent Claims (25, 26)
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Specification