SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor structure, comprising:
- a first device comprising;
a first substrate including a first surface, a second surface opposite to the first surface, and a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material;
a cavity surrounded by the first substrate;
a metallic material disposed over the first surface, covering some of the plurality of vias, and electrically connecting with the first substrate;
a second oxide layer disposed over the second surface;
a membrane disposed over the second oxide layer and the cavity;
a heater disposed within the membrane and electrically connected with the first substrate through the oxide layer;
a sensing electrode disposed over the membrane and the heater; and
a sensing material disposed over the cavity and contacting with the sensing electrode, anda second device comprising;
a second substrate; and
a bonding structure disposed over the second substrate,wherein the metallic material is bonded with the bonding structure to integrate the first device with the second device.
1 Assignment
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Accused Products
Abstract
A semiconductor structure includes a first device and a second device. The first device includes a first substrate, a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material, a cavity surrounded by the first substrate, a metallic material disposed over the first surface, a second oxide layer disposed over the second surface, a membrane disposed over the second oxide layer and the cavity, a heater disposed within the membrane, a sensing electrode disposed over the membrane and the heater, and a sensing material disposed over the cavity and contacting with the sensing electrode. The second device includes a second substrate, and a bonding structure disposed over the second substrate. The metallic material is bonded with the bonding structure to integrate the first device with the second device.
13 Citations
20 Claims
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1. A semiconductor structure, comprising:
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a first device comprising; a first substrate including a first surface, a second surface opposite to the first surface, and a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material; a cavity surrounded by the first substrate; a metallic material disposed over the first surface, covering some of the plurality of vias, and electrically connecting with the first substrate; a second oxide layer disposed over the second surface; a membrane disposed over the second oxide layer and the cavity; a heater disposed within the membrane and electrically connected with the first substrate through the oxide layer; a sensing electrode disposed over the membrane and the heater; and a sensing material disposed over the cavity and contacting with the sensing electrode, and a second device comprising; a second substrate; and a bonding structure disposed over the second substrate, wherein the metallic material is bonded with the bonding structure to integrate the first device with the second device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor structure, comprising:
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a CMOS substrate; an intermetallic dielectric (IMD) layer disposed over the CMOS substrate; a bonding structure disposed over the IMD layer; a MEMS substrate including a first surface facing the CMOS substrate and a second surface opposite to the first surface; a metallic material disposed over the first surface; a cavity surrounded by the MEMS substrate; a polysilicon disposed within the MEMS substrate; a first oxide layer disposed between the polysilicon and the MEMS substrate; a second oxide layer disposed over the second surface; a membrane disposed over the second oxide layer and the cavity; a heater disposed within the membrane and electrically connected with the MEMS substrate; a sensing electrode disposed over the membrane and the heater, and electrically connected with the MEMS substrate; and a sensing material covering a portion of the sensing electrode, wherein the CMOS substrate and the MEMS substrate are integrated by bonding the metallic material with the bonding structure and electrically connecting the CMOS substrate with the MEMS substrate. - View Dependent Claims (12, 13, 14, 15)
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16. A method of manufacturing a semiconductor structure, comprising:
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receiving a first substrate including a first surface, a second surface opposite to the first surface, a plurality of vias extending from the second surface towards the first surface and filled with a conductive or semiconductive material, a first oxide layer disposed between the first substrate and the conductive or semiconductive material, and a second oxide layer disposed over the second surface; disposing and patterning a first membrane layer over the second oxide layer; disposing and patterning a heater over the first membrane layer; disposing and patterning a second membrane layer over the heater and the first membrane layer; disposing a sensing electrode over the second membrane layer; disposing a sacrificial oxide over the sensing electrode and the second membrane layer; removing some of the first substrate from the first surface to expose the conductive or semiconductive material; disposing a metallic material over the first surface and the plurality of vias; forming a cavity surrounded by the first substrate; receiving a second substrate including a bonding structure disposed over the second substrate; bonding the metallic material with the bonding structure; removing the sacrificial oxide; and disposing a sensing material over the sensing electrode. - View Dependent Claims (17, 18, 19, 20)
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Specification