WEAR MANAGEMENT FOR FLASH MEMORY DEVICES

• US 20170068467A1
• Filed: 09/04/2015
• Published: 03/09/2017
• Est. Priority Date: 09/04/2015
• Status: Abandoned Application

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: HGST Netherlands B.V. (Western Digital Corporation)
• Inventors: ROTHBERG, Michael Stephen
• Application Number:
  US14/846,540
• Publication Number:
  US 20170068467A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G06F 3/0616 in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
• CPC Class Codes: G06F 3/0631 by allocating resources to storage systems
• CPC Class Codes: G06F 3/0653 Monitoring storage devices or systems
• CPC Class Codes: G06F 3/0688 Non-volatile semiconductor memory arrays
• CPC Class Codes: G11C 16/349 Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
• CPC Class Codes: G11C 16/3495 Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically

Abstract

A machine-implemented method for managing a flash storage system includes receiving a command for a data operation. The method includes determining a projected life value for each of a plurality of flash memory devices in the flash storage system, wherein the projected life value for at least one of the plurality of flash memory devices is higher than the projected life value for at least another one of the plurality of flash memory devices. The method also includes selecting a flash memory block on one of the plurality of flash memory devices for the data operation based on the respective projected life values for the plurality of flash memory devices.

Claims

1. A machine-implemented method for managing a flash storage system, comprising:

receiving a command for a data operation;

determining a projected life value for each of a plurality of flash memory devices in the flash storage system, wherein the projected life value for at least one of the plurality of flash memory devices is higher than the projected life value for at least another one of the plurality of flash memory devices; and

selecting a flash memory block on one of the plurality of flash memory devices for the data operation based on the respective projected life values for the plurality of flash memory devices.

2. The machine-implemented method for managing a flash storage system according to claim 1, wherein the projected life value for a respective flash memory device is associated with each flash memory block on the respective flash memory device, and wherein the projected life value is a number of program-erase cycles expected to be performed on flash memory blocks in the corresponding flash memory device before failure of the flash memory blocks in the corresponding flash memory device.

3. The machine-implemented method for managing a flash storage system according to claim 2, wherein the flash memory block is selected based on a remaining number of program-erase cycles determined based on the projected life value and a program-erase cycle count associated with the flash memory block.

4. The machine-implemented method for managing a flash storage system according to claim 1, wherein flash memory blocks on the at least one of the plurality of flash memory devices are selected more often for data operations than flash memory blocks on the at least another one of the plurality of flash memory devices.

5. The machine-implemented method for managing a flash storage system according to claim 4, wherein a rate at which the flash memory blocks on the at least one of the plurality of flash memory devices are selected compared to a rate at which the flash memory blocks on the at least another one of the plurality of flash memory devices corresponds to a ratio of the projected life values of the at least one of the plurality of flash memory devices and the at least another one of the plurality of flash memory devices.

6. The machine-implemented method for managing a flash storage system according to claim 1, further comprising performing the data operation on the selected flash memory block, wherein the data operation comprises a garbage collection process to reclaim invalid memory locations in the selected flash memory block or a write operation to write host data received from a host to the selected flash memory block.

7. The machine-implemented method for managing a flash storage system according to claim 1, wherein the projected life value for each of the plurality of flash memory devices is based on a test value measured from a respective test flash memory block in each of the plurality of flash memory devices.

8. A flash storage system, comprising:

a plurality of flash memory devices, each of the plurality of flash memory devices having a projected life value, wherein the projected life value of at least one of the plurality of flash memory devices is higher than the projected life value of at least another one of the plurality of flash memory devices; and

a controller configured to;

receive a command for a data operation; and

select a flash memory block on one of the plurality of flash memory devices for the data operation based on the respective projected life values of the plurality of flash memory devices comprising a plurality of flash memory blocks.

9. The flash storage system according to claim 8, wherein the projected life value for a respective flash memory device is associated with each flash memory block on the respective flash memory device, and

wherein the projected life value is a number of program-erase cycles expected to be performed on flash memory blocks in the corresponding flash memory device before failure of the flash memory blocks in the corresponding flash memory device.

10. The flash storage system according to claim 9, wherein the flash memory block is selected based on a remaining number of program-erase cycles determined based on the projected life value and a program-erase cycle count associated with the flash memory block.

11. The flash storage system according to claim 8, wherein flash memory blocks on the at least one of the plurality of flash memory devices are selected more often for data operations than flash memory blocks on the at least another one of the plurality of flash memory devices.

12. The flash storage system according to claim 11, wherein a rate at which the flash memory blocks on the at least one of the plurality of flash memory devices are selected compared to a rate at which the flash memory blocks on the at least another one of the plurality of flash memory devices corresponds to a ratio of the projected life values of the at least one of the plurality of flash memory devices and the at least another one of the plurality of flash memory devices.

13. The flash storage system according to claim 8, wherein the controller is further configured to perform the data operation on the selected flash memory block, wherein the data operation comprises a garbage collection process to reclaim invalid memory locations in the selected flash memory block or a write operation to write host data received from a host to the selected flash memory block.

14. The flash storage system according to claim 8, wherein the projected life value for each of the plurality of flash memory devices is based on a test value measured from a respective test flash memory block in each of the plurality of flash memory devices.

15. A machine-readable media encoded with executable instructions which, when executed by a processor, cause the processor to perform operations comprising:

determining an order of a plurality of flash memory devices in a flash storage system based on a projected life value for each of the plurality of flash memory devices in the flash storage system, wherein the projected life value of at least one of the plurality of flash memory devices is higher than the projected life value of at least another one of the plurality of flash memory devices;

receiving a command for a data operation;

selecting one of the plurality of flash memory devices based on the order of the plurality of flash memory devices; and

selecting a flash memory block on the selected one of the plurality of flash memory devices for the data operation.

16. The machine-readable media according to claim 15, wherein the projected life value for a respective flash memory device is associated with each flash memory block on the respective flash memory device, and

wherein the projected life value is a number of program-erase cycles expected to be performed on flash memory blocks in the corresponding flash memory device before failure of the flash memory blocks in the corresponding flash memory device.

17. The machine-readable media according to claim 16, wherein the order is determined based on a remaining number of program-erase cycles determined based on the projected life value and a program-erase cycle count associated with the flash memory block.

18. The machine-readable media according to claim 15, wherein flash memory blocks on the at least one of the plurality of flash memory devices are selected more often for data operations than flash memory blocks on the at least another one of the plurality of flash memory devices.

19. The machine-readable media according to claim 18, wherein a rate at which the flash memory blocks on the at least one of the plurality of flash memory devices are selected compared to a rate at which the flash memory blocks on the at least another one of the plurality of flash memory devices corresponds to a ratio of the projected life values of the at least one of the plurality of flash memory devices and the at least another one of the plurality of flash memory devices.

20. The machine-readable media according to claim 15, wherein the projected life value for each of the plurality of flash memory devices is based on a test value measured from a respective test flash memory block in each of the plurality of flash memory devices.