SEMICONDUCTOR DEVICE, METHOD FOR DESIGNING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20170068547A1
• Filed: 12/17/2015
• Published: 03/09/2017
• Est. Priority Date: 09/09/2015
• Status: Abandoned Application

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: MURAKI, Yu, Nakata, Daisuke
• Application Number:
  US14/972,565
• Publication Number:
  US 20170068547A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G06F 2119/06 Power analysis or power optimisation
• CPC Class Codes: G06F 2119/12 Timing analysis or timing optimisation
• CPC Class Codes: G06F 30/30 Circuit design
• CPC Class Codes: G06F 9/44 Arrangements for executing specific programs

Abstract

A semiconductor device includes an electronic circuit, a setting processor, and a voltage generator. The electronic circuit includes a transistor. The setting processor changes a value of an operating voltage to be supplied to the electronic circuit from a first value to a second value smaller than the first value, according to a characteristic of the transistor. The voltage generator generates the operating voltage at a value set by the setting processor. The first value and the second value are decided in consideration of a variation in the characteristic of the transistor due to a variation in the electronic circuit during manufacture.

Claims

1. A semiconductor device comprising:

an electronic circuit including a transistor;

a setting processor that changes a value of an operating voltage to be supplied to the electronic circuit from a first value to a second value according to a characteristic of the transistor, the second value smaller than the first value; and

a voltage generator that generates the operating voltage at a value set by the setting processor, wherein

the first value and the second value are decided in consideration of a variation in the characteristic of the transistor due to a variation in the electronic circuit during manufacture.

2. The semiconductor device according to claim 1, wherein

a range of the variation in the characteristic of the transistor includes a first characteristic and a second characteristic,

the first characteristic satisfies a predetermined characteristic that is required for an operation of the electronic circuit in case where the operating voltage of the second value is supplied, and

the second characteristic satisfies the predetermined characteristic in case where the operating voltage with the first value is supplied, and does not satisfy the predetermined characteristic in case where the operating voltage of the second value is supplied.

3. The semiconductor device according to claim 1, wherein in case where changing the value of the operating voltage, the setting processor changes an operating frequency of the transistor.

4. The semiconductor device according to claim 1, further comprising a detector that detects a temperature of the transistor as a status of the characteristic, wherein

in case where the temperature is equal to or higher than a predetermined first reference temperature, the setting processor decreases the value of the operating voltage from the first value to the second value, and maintains the decreased value of the operating voltage even when the temperature falls less than the first reference temperature after having reached equal to or lower than the first reference temperature.

5. The semiconductor device according to claim 4, wherein in case where the temperature is equal to or higher than the first reference temperature, the setting processor decreases the value of the operating voltage from the first value to the second value at a plurality of steps.

6. The semiconductor device according to claim 4, wherein in case where the temperature falls lower than a predetermined second reference temperature after having reached equal to or higher than the first reference temperature, the setting processor increases the value of the operating voltage from the second value to the first value, the second reference temperature lower than the first reference temperature.

7. The semiconductor device according to claim 1, further comprising a detector that detects a temperature of the transistor as a status of the characteristic, wherein

in case where an increase rate of the temperature is equal to or higher than a reference temperature increase rate, the setting processor decreases the value of the operating voltage from the first value to the second value.

8. The semiconductor device according to claim 1, further comprising a detector that detects a temperature of the transistor as a status of the characteristic, wherein

in case where the temperature is equal to or higher than a predetermined first reference temperature and an increase rate of the temperature is equal to or higher than a reference temperature increase rate, the setting processor decreases the value of the operating voltage from the first value to the second value.

9. The semiconductor device according to claim 1, wherein the setting processor further includes a storage that stores the characteristic of the transistor or the set value of the operating voltage.

10. The semiconductor device according to claim 1, further comprising a detector including a ring oscillator that detects an operating frequency of the transistor as a status of the characteristic, wherein

in case where the operating frequency of the transistor is within a predetermined range, the setting processor decreases the value of the operating voltage from the first value to the second value.

11. The semiconductor device according to claim 1, further comprising a detector that detects a leakage current of the transistor as a status of the characteristic, wherein

when the leakage current is equal to or larger than a predetermined reference current, the setting processor decreases the value of the operating voltage from the first value to the second value.

12. A method for designing a semiconductor device, comprising:

setting a first value and a second value of an operating voltage to be supplied to an electronic circuit including a transistor, in consideration of a variation in a characteristic of the transistor due to a variation in the electronic circuit during manufacture, the second value lower than the first value; and

operating the semiconductor device to change the operating voltage from the first value to the second value according to the characteristic of the transistor.

13. A method for manufacturing a semiconductor device, comprising:

providing an electronic circuit that includes a transistor;

setting a value of an operating voltage to be supplied to the electronic circuit to a first value or a second value according to a characteristic of the transistor of the electronic circuit, the second value smaller than the first value;

providing a voltage generator that generates an operating voltage at a set value; and

deciding the first value and the second value in consideration of a variation in the characteristic of the transistor due to a variation in the electronic circuit during manufacture.