SELECTIVE FORMATION OF METALLIC FILMS ON METALLIC SURFACES
First Claim
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
- cleaning the substrate;
after cleaning carrying out one or more deposition cycles, each cycle comprising;
contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metal surface relative to the second dielectric surface; and
converting the first material on the first metal surface to a second metallic material by exposing the first material to a second precursor comprising metal,wherein the selectivity for deposition on the first surface relative to the second surface is greater than about 50%.
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Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
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Citations
17 Claims
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1. A method for selectively depositing a film on a substrate comprising a first metal surface and a second dielectric surface, the method comprising:
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cleaning the substrate; after cleaning carrying out one or more deposition cycles, each cycle comprising; contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metal surface relative to the second dielectric surface; and converting the first material on the first metal surface to a second metallic material by exposing the first material to a second precursor comprising metal, wherein the selectivity for deposition on the first surface relative to the second surface is greater than about 50%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification