METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a shallow trench isolation (STI) around the fin-shaped structure, in which the fin-shaped structure has a top portion and a bottom portion; forming a first doped layer on the STI and the top portion; and performing a first anneal process.
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Citations
19 Claims
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1-14. -14. (canceled)
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15. A method for fabricating semiconductor device, comprising:
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providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure so that each of the first fin-shaped structure and the second fin-shaped structure is divided into a top portion and a bottom portion; forming a first doped layer on the STI and on the top portion of the second fin-shaped structure; forming a second doped layer on the STI and the top portion of the first fin-shaped structure, wherein the first doped layer and the second doped layer comprise dopants of same type; and performing an anneal process. - View Dependent Claims (16, 17, 18, 19)
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Specification