SILICON DIE WITH INTEGRATED HIGH VOLTAGE DEVICES
First Claim
1. A method comprising:
- forming a plurality of first devices on a substrate;
forming a plurality of first interconnects on the substrate wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices;
coupling one of a second device layer devoid of a plurality of second devices and a device layer comprising a plurality of second devices to ones of the plurality of first interconnects, with the proviso that where a device layer devoid of the plurality of second devices is coupled, the method comprises forming a plurality of second devices on the device layer thereafter;
forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and
forming contacts points to one of ones of the first plurality of interconnects and ones of the second plurality of interconnects, the contact points operable for connection to an external source.
2 Assignments
0 Petitions
Accused Products
Abstract
A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnects, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.
10 Citations
24 Claims
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1. A method comprising:
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forming a plurality of first devices on a substrate; forming a plurality of first interconnects on the substrate wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices; coupling one of a second device layer devoid of a plurality of second devices and a device layer comprising a plurality of second devices to ones of the plurality of first interconnects, with the proviso that where a device layer devoid of the plurality of second devices is coupled, the method comprises forming a plurality of second devices on the device layer thereafter; forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and forming contacts points to one of ones of the first plurality of interconnects and ones of the second plurality of interconnects, the contact points operable for connection to an external source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. (canceled)
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12. An apparatus comprising:
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a first device layer comprising a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects on a substrate wherein ones of the plurality of first interconnects and ones of the plurality of second interconnects are coupled to ones of the plurality of first circuit devices; a second device layer comprising a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects; and contacts points coupled to one of ones of the first plurality of interconnects and ones of the second plurality of interconnects, the contact points operable for connection to an external source, wherein one of the plurality of first devices and the plurality of second devices comprise devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices. - View Dependent Claims (13, 14, 15, 16)
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17. A method comprising:
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forming a first device layer comprising a plurality of first circuit devices; forming a plurality of first interconnects wherein ones of the plurality of first interconnects are coupled to ones of the plurality of first devices; juxtaposing one of a second device layer devoid of a plurality of second devices and a device layer comprising a plurality of second devices to ones of the plurality of first interconnects, with the proviso that where a device layer devoid of the plurality of second devices is coupled, the method comprises forming a plurality of second devices; forming a plurality of second interconnects on the second device layer wherein ones of the plurality of second interconnects are coupled to ones of the plurality of second devices; and juxtaposing contacts points to one of ones of the first plurality of interconnects and ones of the second plurality of interconnects, the contact points operable for connection to an external source, wherein one of the plurality of first devices and the plurality of second devices comprise devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. (canceled)
Specification