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POWER SEMICONDUCTOR DEVICE

  • US 20170069741A1
  • Filed: 05/04/2016
  • Published: 03/09/2017
  • Est. Priority Date: 09/08/2015
  • Status: Active Grant
First Claim
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1. A power semiconductor device, comprising:

  • a semiconductor substrate;

    trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate;

    a second conductivity type body region formed between the trench structures;

    a first conductivity type source region formed in the second conductivity type body region; and

    an emitter electrode and a gate pad formed over the substrate,wherein each trench structure comprises a top electrode and a bottom electrode, and each top electrode is insulated from a corresponding bottom electrode, andwherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, andwherein the first trench structure is different from the second trench structure, andwherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.

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