POWER SEMICONDUCTOR DEVICE
First Claim
1. A power semiconductor device, comprising:
- a semiconductor substrate;
trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate;
a second conductivity type body region formed between the trench structures;
a first conductivity type source region formed in the second conductivity type body region; and
an emitter electrode and a gate pad formed over the substrate,wherein each trench structure comprises a top electrode and a bottom electrode, and each top electrode is insulated from a corresponding bottom electrode, andwherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, andwherein the first trench structure is different from the second trench structure, andwherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.
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Accused Products
Abstract
A power semiconductor device includes a semiconductor substrate, trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate, a second conductivity type body region formed between the trench structures, a first conductivity type source region formed in the second conductivity type body region, and an emitter electrode and a gate pad formed over the substrate, wherein each trench structure includes a top electrode and a bottom electrode, and each top electrode is insulated from the corresponding bottom electrode, and wherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, and wherein the first trench structure is not identical to the second trench structure, and wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.
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Citations
20 Claims
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1. A power semiconductor device, comprising:
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a semiconductor substrate; trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate; a second conductivity type body region formed between the trench structures; a first conductivity type source region formed in the second conductivity type body region; and an emitter electrode and a gate pad formed over the substrate, wherein each trench structure comprises a top electrode and a bottom electrode, and each top electrode is insulated from a corresponding bottom electrode, and wherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, and wherein the first trench structure is different from the second trench structure, and wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A power semiconductor device, comprising:
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a semiconductor substrate comprising first, second, third, and fourth trench structures, wherein a second conductivity type body region is formed between each of the trench structures, wherein a first conductivity type source region is formed in the second conductivity type body region, wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure, wherein each trench structure comprises a top electrode and a bottom electrode, and wherein each top electrode is insulated from a corresponding bottom electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification