PHOTOVOLTAIC CELL STRUCTURE AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL
First Claim
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1. A photovoltaic cell structure, comprising semiconductor type-p substrate with bottom electric contact upon which the active ZnO film is present, with the transparent conductive layer upon it, preferably ZnO:
- Al film, with an electric contact, characterized in that the active ZnO layer consists of ZnO nanostructures film at least 50 nm thick, deposited on nucleating layer and covered with ZnO film at least 1 nm thick.
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Abstract
The invention relates to the photo-voltalic cell structure comprising semiconductor type-p substrate with bottom electric contact upon which the active ZnO film is present, with the transparent conductive layer upon it, preferably ZnO:Al film, with an electric contact, characterized in that the active ZnO layer consists of ZnO nanostructures film at least 50 nm thick, deposited on nucleating layer and covered with ZnO film at least 1 nm thick, and the method to produce the photovoltaic structure.
2 Citations
8 Claims
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1. A photovoltaic cell structure, comprising semiconductor type-p substrate with bottom electric contact upon which the active ZnO film is present, with the transparent conductive layer upon it, preferably ZnO:
- Al film, with an electric contact, characterized in that the active ZnO layer consists of ZnO nanostructures film at least 50 nm thick, deposited on nucleating layer and covered with ZnO film at least 1 nm thick.
- View Dependent Claims (2)
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3. The method of carrying out the photovoltaic cell structure, wherein upon p-type substrate with bottom electric contact an active layer of ZnO is deposited, upon which a transparent ZnO:
- Al electrode film and electric contact are deposited, characterized in that upon the substrate, preferably silicon, an active ZnO layer is created in the form of nanorods covered with ZnO film, wherein in order to produce that layer, the substrate is first covered with the nucleating layer, then the substrate with the nucleating layer is placed in a reaction mixture with pH of 6.5-12, containing a solvent, at least one oxygen precursor, and at least one zinc precursor, heated up to the temperature of 30-95°
C. and kept in this temperature for at least 1 second, and after completion of this process, impurities are removed from the substrate and crystallized nanorods, preferably by annealing for at least 1 second in the temperature of 100°
C., after which the nanorods are covered, in an ALD process, with ZnO film at least 1 nm thick, and so created active layer is covered with a transparent ZnO;
Al electrode film, which the upper electric contact is made on. - View Dependent Claims (4, 5, 6, 7, 8)
- Al electrode film and electric contact are deposited, characterized in that upon the substrate, preferably silicon, an active ZnO layer is created in the form of nanorods covered with ZnO film, wherein in order to produce that layer, the substrate is first covered with the nucleating layer, then the substrate with the nucleating layer is placed in a reaction mixture with pH of 6.5-12, containing a solvent, at least one oxygen precursor, and at least one zinc precursor, heated up to the temperature of 30-95°
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