LIGHT EMITTING DEVICE WITH EPITAXIAL STRUCTURE

• US 20170069796A1
• Filed: 01/20/2016
• Published: 03/09/2017
• Est. Priority Date: 09/04/2015
• Status: Abandoned Application

• Current Assignee: PlayNitride Inc.
• Original Assignee: PlayNitride Inc.
• Inventors: Lin, Tzu-Yang, Lai, Yu-Hung, Lo, Yu-Yun
• Application Number:
  US15/001,250
• Publication Number:
  US 20170069796A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05138 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05193 with a principal constituent of the material being a solid not provided for in groups H01L2224/051 - H01L2224/05191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
• CPC Class Codes: H01L 2224/0529 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/053 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/05609 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/05611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05638 the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05686 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05693 : with a principal constituent of the material being a solid not provided for in groups H01L2224/056 - H01L2224/05691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
• CPC Class Codes: H01L 2224/0579 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/058 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/0603 : Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/08145 : the bodies being stacked
• CPC Class Codes: H01L 2224/08225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/80006 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/80409 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/80411 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/80815 : Reflow soldering
• CPC Class Codes: H01L 2224/80825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/95001 : involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/95136 : involving guiding structures, e.g. shape matching, spacers or supporting members
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/80 : Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/95 : at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2924/0543 : 13th Group
• CPC Class Codes: H01L 2924/0544 : 14th Group
• CPC Class Codes: H01L 2924/0549 : being a combination of two or more materials provided in the groups H01L2924/0531 - H01L2924/0546
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1304 : Transistor
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/486 : adapted for surface mounting

Abstract

A light emitting device includes a carrier, at least one epitaxial structure, at least one buffer pad and at least one bonding pad. The epitaxial structure is disposed on the carrier. The buffer pad is disposed between the carrier and the epitaxial structure, wherein the epitaxial structure is temporarily bonded to the carrier by the buffer pad. The bonding pad is disposed on the epitaxial structure, wherein the epitaxial structure is electrically connected to a receiving substrate by the bonding pad.

Claims

1. A light emitting device, comprising:

a carrier;

at least one epitaxial structure, disposed on the carrier and comprising;

a first type semiconductor layer;

a second type semiconductor layer; and

an active layer, located between the first type semiconductor layer and the second type semiconductor layer, wherein a thickness of the second type semiconductor layer is greater than a thickness of the first type semiconductor layer;

at least one buffer pad, disposed on a top surface of the carrier and between the carrier and the epitaxial structure, wherein the second type semiconductor layer directly contacts the buffer pad, the epitaxial structure is bonded to the carrier by the buffer pad, and a material of the buffer pad comprises a polymer, and the buffer pad exposes part of the top surface, wherein an area of an orthogonal projection of the second type semiconductor layer is different from of an area of an orthogonal projection of the buffer pad on the carrier; and

at least one bonding pad, disposed on the epitaxial structure and between the epitaxial structure and a receiving substrate, wherein the epitaxial structure is electrically connected to the receiving substrate through the bonding pad.

2. The light emitting device as claimed in claim 1, wherein the carrier is a tentative substrate.

4. The light emitting device as claimed in claim 1, wherein a side length of the first type semiconductor layer is smaller than a side length of the second type semiconductor layer, and a difference in side lengths between the first type semiconductor layer and the second type semiconductor layer is in a range from 0.5 micrometers to 5 micrometers.

6. The light emitting device as claimed in claim 1, wherein the thickness of the second type semiconductor layer is 3 times to 15 times of a thickness of the active layer, and the thickness of the second type semiconductor layer is 10 times to 20 times of the thickness of the first type semiconductor layer.

7. The light emitting device as claimed in claim 1, wherein the at least one bonding pad comprises at least one first bonding pad and at least one second bonding pad, the first bonding pad and the second bonding pad are located at the same side of the epitaxial structure, the first bonding pad is electrically connected to the first type semiconductor layer, and the second bonding pad is electrically connected to the second type semiconductor layer.

8. The light emitting device as claimed in claim 1, further comprising:

an insulating layer, disposed on the buffer pad and covering a sidewall of the epitaxial structure, wherein the insulating layer exposes a top surface of the epitaxial structure to form a contact opening, and the bonding pad is disposed on the contact opening and electrically connected to the epitaxial structure.

9. The light emitting device as claimed in claim 1, wherein an area ratio of the buffer pad to the epitaxial structure is R, and 0.6≦

R<

1 or 1<

R≦

1.2.

10. The light emitting device as claimed in claim 1, wherein in a vertical direction with respect to the carrier, the buffer pad and the epitaxial structure are conformal patterns.

12. The light emitting device as claimed in claim 1, wherein a highest peak current density of an external quantum efficiency curve of the epitaxial structure is lower than 2 A/cm².

13. The light emitting device as claimed in claim 1, wherein a defect density of the epitaxial structure is less than 5×

10⁸/cm².

15. The light emitting device as claimed in claim 1, wherein the epitaxial structure is temporarily bonded to the carrier by the buffer pad.

16. The light emitting device as claimed in claim 1, wherein the buffer pad is formed through thermal curing or UV curing.

3. (canceled)

5. (canceled)

11. (canceled)

14. A light emitting device, comprising:

a carrier;

a plurality of epitaxial structures, disposed on a top surface of the carrier periodically and separately, wherein each of the epitaxial structures comprises;

a first type semiconductor layer;

a second type semiconductor layer; and

an active layer, located between the first type semiconductor layer and the second type semiconductor layer, wherein a thickness of the second type semiconductor layer is greater than a thickness of the first type semiconductor layer;

a plurality of buffer pads, disposed between the carrier and the epitaxial structures and respectively disposed in correspondence with the second type semiconductor layer of the epitaxial structures, wherein the epitaxial structures respectively and directly contact the buffer pads, the epitaxial structures are respectively bonded on the carrier by the buffer pads, the buffer pads expose part of the top surface of the carrier, and a material of the buffer pads comprises a polymer; and

a plurality of bonding pads, disposed on the epitaxial structures, wherein the epitaxial structures are electrically connected to a receiving substrate through the bonding pads, and a gap between any adjacent two of the buffer pads is 0.2 times to 2 times of a side length of each of the epitaxial structures.

17. The light emitting device as claimed in claim 14, wherein an area ratio of each of the buffer pads to each of the epitaxial structures is R, and 0.6≦

R<

1 or 1<

R≦

1.2.

18. The light emitting device as claimed in claim 14, wherein the bonding pads are disposed between the epitaxial structures and a receiving substrate.

19. The light emitting device as claimed in claim 14, wherein the epitaxial structures are temporarily bonded to the carrier by the buffer pads.