MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

• US 20170069829A1
• Filed: 08/26/2016
• Published: 03/09/2017
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: MORISE, Hirofumi, KONDO, Tsuyoshi, OOTERA, Yasuaki, SHIMADA, Takuya, QUINSAT, Michael Amaud, NAKAMURA, Shiho
• Granted Patent: US 9,705,073 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/067 using elements with single aperture or magnetic loop for storage, one element per bit, and for non-destructive read-out contains no documents, see G11C11/0605 - G11C11/06071
• CPC Class Codes: G11C 11/155 with cylindrical configuration
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1653 Address circuits or decoders
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/20 comprising components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

According to one embodiment, a magnetic memory element includes a first magnetic unit, a second magnetic unit, a nonmagnetic unit, and a controller. The second magnetic unit includes a first portion and a second portion. The first portion includes a first region and a second region. The controller performs a first operation and a second operation. In the first operation, the controller changes a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction. The first current has a first current value. In the second operation, the controller changes a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction. The second current has a second current value. The second current value is less than the first current value.

Claims

1. A magnetic memory element, comprising:

a first magnetic unit;

a second magnetic unit having a tubular configuration extending in a first direction, the second magnetic unit including a first portion and a second portion, the first portion being provided between the first magnetic unit and the second portion, the first portion including

a first region having a first saturation magnetization, a first magnetic anisotropy, and a first damping constant, and

a second region arranged with the first region in a second direction, the second direction being perpendicular to the first direction, the second region having at least one of a second saturation magnetization smaller than the first saturation magnetization, a second magnetic anisotropy smaller than the first magnetic anisotropy, or a second damping constant smaller than the first damping constant;

a nonmagnetic unit provided between the first magnetic unit and the second magnetic unit; and

a controller electrically connected to the first magnetic unit and the second magnetic unit,

the controller performing

a first operation of changing a direction of a magnetization of the first region by causing a first current to flow through the first portion in a first current direction, the first current having a first current value, and

a second operation of changing a direction of a magnetization of the second region by causing a second current to flow through the first portion in a second current direction, the second current having a second current value,

the second current value being less than the first current value, the first current direction being aligned with the first direction, the second current direction being the reverse of the first current direction.

2. The element according to claim 1, wherein the second magnetic unit includes a plurality of magnetic domains arranged in the first direction.

3. The element according to claim 2, wherein the first portion includes one of the plurality of magnetic domains.

4. The element according to claim 1, wherein the controller performs the second operation after the first operation.

5. The element according to claim 4, further comprising:

a first insulating unit; and

a second insulating unit,

the second magnetic unit being provided around the first insulating unit,

the second insulating unit being provided around the magnetic unit,

a direction of a magnetization of the magnetic domain of the first portion being a direction from the first insulating unit toward the second insulating unit or a direction from the second insulating unit toward the first insulating unit.

6. The element according to claim 1, wherein

the first magnetic unit includes:

a first layer; and

a second layer,

the first layer is provided between the nonmagnetic unit and the second layer,

the first layer includes a magnetic material, and

the second layer includes an antiferromagnetic material.

7. The element according to claim 1, wherein the first magnetic unit is magnetized in the second direction.

8. The element according to claim 1, wherein the first portion contacts the nonmagnetic unit.

9. The element according to claim 1, wherein

the second magnetic unit includes a third portion provided between the first portion and the second portion, and

a length in the second direction of the third portion is shorter than a length in the second direction of at least one portion of the first portion.

10. The element according to claim 9, wherein

the second magnetic unit includes a plurality of the third portions, and

the plurality of third portions is arranged to be separated from each other in the first direction between the first portion and the second portion.

11. The element according to claim 1, further comprising:

a first electrode; and

a second electrode,

the first magnetic unit being provided between the first electrode and the nonmagnetic unit,

the second magnetic unit being provided between the second electrode and the nonmagnetic unit.

12. The element according to claim 11, further comprising a third electrode provided around one portion of the second magnetic unit,

the third electrode and the one portion of the second magnetic unit overlapping in the second direction.

13. The element according to claim 12, wherein the controller performs the first operation and the second operation by causing the first current and the second current to flow between the first electrode and the third electrode.

14. The element according to claim 1, wherein a ratio of the first current value to the second current value is not less than 1.5:

1 and not more than 5;

1.

15. The element according to claim 1, wherein

the first portion includes an alloy of a rare-earth element and a transition metal element, and

a composition ratio of the rare-earth element in the first region is different from a composition ratio of the rare-earth element in the second region.

16. A magnetic memory, comprising:

a plurality of magnetic memory elements, each of the plurality of magnetic memory elements including

a first magnetic unit;

a second magnetic unit having a tubular configuration extending in a first direction, the second magnetic unit including a first portion and a second portion, the first portion being provided between the first magnetic unit and the second portion, the first portion including a first region and a second region, the first region having a first saturation magnetization, a first magnetic anisotropy, and a first damping constant, the second region arranged with the first region in a second direction, the second direction being perpendicular to the first direction, the second region having at least one of a second saturation magnetization smaller than the first saturation magnetization, a second magnetic anisotropy smaller than the first magnetic anisotropy, or a second damping constant smaller than the first damping constant; and

a nonmagnetic unit provided between the first magnetic unit and the second magnetic unit;

a first word line;

a first switching element, the first switching element including a first terminal, a second terminal, and a first gate, the first terminal being electrically connected to the second portion of one magnetic memory element of the plurality of magnetic memory elements, the second terminal being connected to a fixed potential, the first gate being connected to the first word line; and

a first bit line electrically connected to the first magnetic unit of the one magnetic memory element of the plurality of magnetic memory elements.

17. A magnetic memory, comprising:

a plurality of magnetic memory elements, each of the plurality of magnetic memory elements including

a first magnetic unit;

a second magnetic unit having a tubular configuration extending in a first direction, the second magnetic unit including a first portion and a second portion, the first portion being provided between the first magnetic unit and the second portion, the first portion including a first region and a second region, the first region having a first saturation magnetization, a first magnetic anisotropy, and a first damping constant, the second region arranged with the first region in a second direction, the second direction being perpendicular to the first direction, the second region having at least one of a second saturation magnetization smaller than the first saturation magnetization, a second magnetic anisotropy smaller than the first magnetic anisotropy, or a second damping constant smaller than the first damping constant;

a nonmagnetic unit provided between the first magnetic unit and the second magnetic unit; and

a third electrode provided around one portion of the second magnetic unit, the third electrode and the one portion of the second magnetic unit overlapping in the second direction;

a first word line;

a second word line;

a first switching element, the first switching element including a first terminal, a second terminal, and a first gate, the first terminal being electrically connected to the second portion of one magnetic memory element of the plurality of magnetic memory elements, the second terminal being connected to a fixed potential, the first gate being connected to the first word line;

a second switching element, the second switching element including a third terminal, a fourth terminal, and a second gate, the third terminal being electrically connected to the third electrode of one magnetic memory element of the plurality of magnetic memory elements, the fourth terminal being connected to a fixed potential, the second gate being connected to the second word line; and

a first bit line electrically connected to the first magnetic unit of the one magnetic memory element of the plurality of magnetic memory elements.