BOLOMETER AND METHOD FOR MEASUREMENT OF ELECTROMAGNETIC RADIATION

• US 20170074725A1
• Filed: 11/02/2016
• Published: 03/16/2017
• Est. Priority Date: 05/07/2014
• Status: Active Grant

• Current Assignee: ams AG (Ams-Osram AG)
• Original Assignee: ams AG (Ams-Osram AG)
• Inventors: ROEHRER, Georg, CARNIELLO, Sara
• Granted Patent: US 10,234,332 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01J 5/02 Constructional details
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).

Claims

1. A bolometer, comprising:

a first and a second suspension beam and

a semiconductor portion that is suspended by the first and the second suspension beam and comprises a first region of a first conductivity type and a second region of a second conductivity type, wherein the first region comprises at least two stripes or islands which each contribute to a non-short-circuited diode with the second region and

wherein the at least two stripes of the first region or the at least two islands of the first region are electrically connected to each other and to the first suspension beam by a metal connection.

2. The bolometer according to claim 1,

wherein the first region and the second region both reach from a first semiconductor surface of the semiconductor portion to a second semiconductor surface of the semiconductor portion.

3. The bolometer according to claim 1,

wherein the diode has a diode width at the first semiconductor surface that is larger than a length of a perimeter of the semiconductor portion.

4. The bolometer according to claim 1,

wherein the first region is electrically connected by the first suspension beam and the second region is electrically connected by the second suspension beam.

5. The bolometer according to claim 1,

wherein the semiconductor portion is made of poly-silicon.

6. The bolometer according to claim 1,

wherein the first semiconductor surface is directed towards an electromagnetic radiation that is to be detected and is covered by an isolating layer.

7. The bolometer according to claim 6,

wherein the isolating layer is made of silicon dioxide.

8. The bolometer according to claim 1,

wherein the at least two stripes of the first region are rectangular or tapered.

9. The bolometer according to claim 1,

wherein the at least two stripes of the first region are electrically connected to each other and to the first suspension beam by a further stripe of the first region.

10. The bolometer according to claim 1,

wherein each of the at least two islands of the first region is completely surrounded in the plane of the semiconductor portion by the second region.

11. The bolometer according to claim 1,

wherein the at least two islands of the first region are arranged in an array form in a checkered manner.

13. The bolometer according to claim 1,

wherein the semiconductor portion is made of poly-silicon or single crystal silicon, and

wherein a perimeter of the semiconductor portion is circular or elliptical or is a hexagon or a rectangle.

14. The bolometer according to claim 1,

wherein the diode has a diode width at the first semiconductor surface that is larger than a quarter of a length of the perimeter of the semiconductor portion, and

wherein the diode width is equal to a length of a line or to a sum of the lengths of the lines at which the first region is in contact with the second region at the first semiconductor surface.

12. A method for measurement of electromagnetic radiation, comprising:

setting a diode of a bolometer in an operating point,

absorbing the electromagnetic radiation by the bolometer and

measuring of an electrical parameter of the diode in the operating point,

wherein the bolometer comprises a first and a second suspension beam and a semiconductor portion which is suspended by the first and the second suspension beam and comprises a first region of a first conductivity type and a second region of a second conductivity type, wherein the first region comprises at least two stripes or islands which each contribute to the non-short-circuited diode with the second region,

wherein the at least two stripes of the first region or the at least two islands of the first region are electrically connected to each other and to the first suspension beam by a metal connection.

15. A bolometer, comprising

a first and a second suspension beam and

a semiconductor portion which is suspended by the first and the second suspension beam and comprises a first region of a first conductivity type and a second region of a second conductivity type,

wherein the first region comprises a first triangle or at least two stripes or islands which each contribute to a diode with the second region.

16. The bolometer according to claim 15,

wherein the diode is realized as a non-short-circuited diode.