ASYMMETRIC WAVEGUIDE CONFIGURATION ON A SILICON NITRIDE BASIS
First Claim
1. A polarization dependent mode converter, comprising:
- a waveguide of a waveguide material embedded within a cladding material, wherein the waveguide material comprises SiNx or another solid waveguide material having a refractive index between 1.7 to 2.3, and wherein the cladding material comprises SiO2 or another solid cladding material having a refractive index between 1 and 1.6; and
wherein the waveguide comprises in a portion along its lengthwise extension a first section having a vertical asymmetric configuration, the vertical asymmetric configuration comprises a thin layer of silicon above the waveguide material, the thickness of the thin silicon layer in vertical direction is less than the thickness of the waveguide material in the same vertical direction.
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Abstract
A polarization dependent mode converter is provided on a semiconductor basis, having a waveguide made of a waveguide material comprising SiNx, or another solid waveguide material having a refractive index between 1.7 to 2.3, embedded in a cladding material comprising SiO2 or another solid cladding material having a refractive index between 1 and 1.6, wherein the waveguide includes in a portion along its lengthwise extension a first section having a vertical asymmetric configuration, the asymmetric configuration includes a thin layer of silicon above the waveguide material, the thickness of the thin Si-layer in vertical direction is less than the thickness of the waveguide material in the same vertical direction.
37 Citations
17 Claims
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1. A polarization dependent mode converter, comprising:
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a waveguide of a waveguide material embedded within a cladding material, wherein the waveguide material comprises SiNx or another solid waveguide material having a refractive index between 1.7 to 2.3, and wherein the cladding material comprises SiO2 or another solid cladding material having a refractive index between 1 and 1.6; and wherein the waveguide comprises in a portion along its lengthwise extension a first section having a vertical asymmetric configuration, the vertical asymmetric configuration comprises a thin layer of silicon above the waveguide material, the thickness of the thin silicon layer in vertical direction is less than the thickness of the waveguide material in the same vertical direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A polarization splitter and rotator comprising:
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a polarization dependent mode converter, comprising; a waveguide of a waveguide material embedded in a cladding material, wherein the waveguide material comprises SiNx or another solid waveguide material having a refractive index between 1.7 to 2.3 and the cladding material comprises SiO2 or another solid cladding material having a refractive index between 1 and 1.6, and wherein the waveguide comprises in a portion along its lengthwise extension a first section having a vertical asymmetric configuration, the asymmetric configuration comprises a thin layer of silicon above the waveguide material, the thickness of the thin Si-layer in vertical direction is less than the thickness of the waveguide material in the same vertical direction; and
a second section comprising;means for converting a TE1 mode from the polarization dependent mode converter to a TE0 mode and couple it into a first output port and for coupling the TE0 mode from the polarization dependent mode converter without conversion in a second output port. - View Dependent Claims (15, 16, 17)
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Specification