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OXIDE SINTERED BODY, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET

  • US 20170076943A1
  • Filed: 03/09/2015
  • Published: 03/16/2017
  • Est. Priority Date: 03/14/2014
  • Status: Abandoned Application
First Claim
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1. An oxide sintered body comprising indium and gallium as oxides, whereina gallium content is 0.20 or more and 0.60 or less in terms of Ga/(In+Ga) atomic ratio,the oxide sintered body contains nitrogen but does not contain zinc, andthe oxide sintered body does not substantially include a GaN phase having a wurtzite-type structure.

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