Plasma System, Chuck and Method of Making a Semiconductor Device

• US 20170076962A1
• Filed: 11/22/2016
• Published: 03/16/2017
• Est. Priority Date: 07/06/2012
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Engelhardt, Manfred
• Granted Patent: US 10,043,683 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01J 2237/332 Coating
• CPC Class Codes: H01J 2237/3341 Reactive etching
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: Y10T 279/21 with measuring, indicating or control means

Abstract

A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first RF power generator, a second conductive region configured to be capacitively coupled to a second RF power generator and an insulation region that electrically insulates the first conductive region from the second conductive region.

Claims

1. A chuck comprising:

a first conductive region configured to be capacitively coupled to a first RF power signal;

a second conductive region configured to be capacitively coupled to a second RF power signal; and

an insulation region that electrically insulates the first conductive region from the second conductive region.

2. The chuck according to claim 1, wherein the first conductive region is an inner region of the chuck, and wherein the second conductive region is an outer region of the chuck.

3. The chuck according to claim 2, wherein the first conductive region is disk shaped, and wherein the second conductive region is a concentric ring.

4. The chuck according to claim 1, further comprising:

a third conductive region configured to be capacitively coupled to a third RF power signal; and

a second insulated region that electrically insulates the second conductive region from the third conductive region.

5. A system comprising:

a plasma chamber;

a first electrode located in the plasma chamber; and

a second electrode located in the plasma chamber and configured to receive a workpiece, wherein the second electrode comprises a first conductive region and a second conductive region that is electrically insulated from the first conductive region, wherein the first conductive region is configured to receive a first RF power and the second conductive region is configured to receive a second RF power.

6. The system according to claim 5, wherein the first RF power is different from the second RF power.

7. The system according to claim 5, wherein the first conductive region is further configured to be set to a first temperature, and wherein the second conductive region is further configured to be set to a second temperature.

8. The system according to claim 5, further comprising a first RF power generator configured to generate the first RF power and a second RF power generator configured to generate the second RF power.

9. The system according to claim 8, wherein the first RF power and the second RF power are each about 500 W to 1000 W.

10. The system according to claim 8, wherein a first frequency of the first RF power and a second frequency of the second RF power are phase locked.

11. The system according to claim 10, wherein the first frequency of the first RF power and the second frequency of the second RF power are driven by a common local oscillator.

12. The system according to claim 10, wherein the first RF power generator and the second RF power generator are a combined power generator with a power splitter.

13. The system according to claim 10, wherein the first conductive region comprises a first center point, wherein the second conductive region comprises a second center point, and wherein the first center point and the second center point are on a common central axis extending away from the chuck along a direction perpendicular to a major surface of the chuck.

14. A system comprising:

a chuck comprising

a first conductive region configured to be capacitively coupled to a first RF power signal,

a second conductive region configured to be capacitively coupled to a second RF power signal, wherein the first conductive region is disk shaped, and the second conductive region is a concentric ring,

an insulation region that electrically insulates the first conductive region from the second conductive region,

a third conductive region configured to be capacitively coupled to a third RF power signal, and

a second insulated region that electrically insulates the second conductive region from the third conductive region.

15. The system according to claim 14, wherein the first conductive region is further configured to be set to a first temperature, and wherein the second conductive region is further configured to be set to a second temperature.

16. The system according to claim 14, further comprising a first RF power generator configured to generate the first RF power and a second RF power generator configured to generate the second RF power.

17. The system according to claim 16, wherein the first RF power and the second RF power are each about 500 W to 1000 W.

18. The system according to claim 16, wherein a first frequency of the first RF power and a second frequency of the second RF power are phase locked.

19. The system according to claim 18, wherein the first frequency of the first RF power and the second frequency of the second RF power are driven by a common local oscillator.

20. The system according to claim 18, wherein the first RF power generator and the second RF power generator are a combined power generator with a power splitter.